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Paper Abstract and Keywords
Presentation 2022-11-24 15:45
Estimation of electrical characteristics of surface treatment after recess structure formation in AlGaN/GaN MIS-HEMTs
Keitaro Toda, Toshiharu Kubo, Takashi Egawa (NITech) ED2022-37 CPM2022-62 LQE2022-70
Abstract (in Japanese) (See Japanese page) 
(in English) Degradation of electrical characteristics due to etching damage during recess structure formation has been an issue for normally-off type devices with a recess structure using ALD-SiO2/Al2O3 bilayer insulating film /AlGaN/GaN MIS-HEMTs. In order to improve the I/S interface after etching, we fabricated MIS-HEMTs with HCl and annealing treatments and evaluated the electrical properties. We confirmed that the RMS of the etched surface decreased from 0.65 nm to 0.42 nm by combining HCl treatment and 500℃ annealing. Furthermore, Vth shifted to the positive side from 2.68 V to 3.24 V, and ⊿Vth decreased by 1.1 V. We confirmed that the interface state at 0.7 eV below the conduction band minimum decreased by half from 2×1013 cm-2eV-1 to 7×1012 cm-2eV-1. We found that the surface treatment by HCl and annealing treatment is effective for the etching surface, and it is possible to fabricate a device that suppresses etching damage.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / MIS / HEMT / ALD / Al2O3 / SiO2 / /  
Reference Info. IEICE Tech. Rep., vol. 122, no. 271, ED2022-37, pp. 61-64, Nov. 2022.
Paper # ED2022-37 
Date of Issue 2022-11-17 (ED, CPM, LQE) 
ISSN Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2022-37 CPM2022-62 LQE2022-70

Conference Information
Committee CPM ED LQE  
Conference Date 2022-11-24 - 2022-11-25 
Place (in Japanese) (See Japanese page) 
Place (in English) Winc Aichi (Aichi Industry & Labor Center) 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2022-11-CPM-ED-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Estimation of electrical characteristics of surface treatment after recess structure formation in AlGaN/GaN MIS-HEMTs 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) MIS  
Keyword(3) HEMT  
Keyword(4) ALD  
Keyword(5) Al2O3  
Keyword(6) SiO2  
Keyword(7)  
Keyword(8)  
1st Author's Name Keitaro Toda  
1st Author's Affiliation Nagoya Insititute of technology (NITech)
2nd Author's Name Toshiharu Kubo  
2nd Author's Affiliation Nagoya Insititute of technology (NITech)
3rd Author's Name Takashi Egawa  
3rd Author's Affiliation Nagoya Insititute of technology (NITech)
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Speaker Author-1 
Date Time 2022-11-24 15:45:00 
Presentation Time 20 minutes 
Registration for ED 
Paper # ED2022-37, CPM2022-62, LQE2022-70 
Volume (vol) vol.122 
Number (no) no.271(ED), no.272(CPM), no.273(LQE) 
Page pp.61-64 
#Pages 4 
Date of Issue 2022-11-17 (ED, CPM, LQE) 

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