Paper Abstract and Keywords |
Presentation |
2022-12-09 11:20
Investigation for one-chip high functionality gate driver IC Yusuke Ogushi, Satoshi Matsumoto (KIT) EE2022-22 CPM2022-77 OME2022-35 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN power devices have caught the attentions for high frequency switching and high efficiency of power supply. Our goal is to realize 3D power-SoC, which stacks driver circuit and control circuit for GaN power devices, and passive devices on one chip. One of the key issues to realize 3D power SoC is to develop fully integrated driver IC for GaN power devices without using discrete devices such as Schottky barrier diode. In this paper, we report the fully integrated gate driver IC with higher functionality. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
3D power SoC / GaN power device / Charge pump / Integration / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 122, no. 299, EE2022-22, pp. 18-23, Dec. 2022. |
Paper # |
EE2022-22 |
Date of Issue |
2022-12-02 (EE, CPM, OME) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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EE2022-22 CPM2022-77 OME2022-35 |
Conference Information |
Committee |
EE OME CPM |
Conference Date |
2022-12-09 - 2022-12-09 |
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(See Japanese page) |
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Paper Information |
Registration To |
EE |
Conference Code |
2022-12-EE-OME-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Investigation for one-chip high functionality gate driver IC |
Sub Title (in English) |
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Keyword(1) |
3D power SoC |
Keyword(2) |
GaN power device |
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Charge pump |
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Integration |
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1st Author's Name |
Yusuke Ogushi |
1st Author's Affiliation |
Kyushu Institute of Technology (KIT) |
2nd Author's Name |
Satoshi Matsumoto |
2nd Author's Affiliation |
Kyushu Institute of Technology (KIT) |
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Speaker |
Author-1 |
Date Time |
2022-12-09 11:20:00 |
Presentation Time |
25 minutes |
Registration for |
EE |
Paper # |
EE2022-22, CPM2022-77, OME2022-35 |
Volume (vol) |
vol.122 |
Number (no) |
no.299(EE), no.300(CPM), no.301(OME) |
Page |
pp.18-23 |
#Pages |
6 |
Date of Issue |
2022-12-02 (EE, CPM, OME) |
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