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Paper Abstract and Keywords
Presentation 2022-12-19 16:05
[Invited Talk] InP-HEMT Fabrication Process Technology for Beyond 5G Wireless Network with Tera-Hertz Band
Takuya Tsutsumi, Hiroshi Hamada, Teruo Jyo, Hiroki Sugiyama, Taro Sasaki, Hiroyuki Takahashi, Fumito Nakajima (NTT) ED2022-76 MWPTHz2022-47
Abstract (in Japanese) (See Japanese page) 
(in English) Next-generation "Beyond 5G (B5G) / 6G" wireless network systems have been researched and developed for meeting with rapid growth of mobile traffics. We report high-yield fabrication process of InP-based high mobility transistors (InP-HEMTs) and Tera-Hertz monolithic ICs (THz-ICs) with 300-GHz-operation which is one of the candidate frequency for B5G/6G network systems. We also introduce InP-based THz-ICs such as 300-GHz power amplifiers and mixers and indicate that InP-based devices are an applicable candidate for B5G/6G.
Keyword (in Japanese) (See Japanese page) 
(in English) Beyond 5G (B5G) / 6G / Tera-Hertz ICs (THz-ICs) / Indium phosphide (InP) / High electron mobility transistors (HEMTs) / Backside process / 300-GHz band / /  
Reference Info. IEICE Tech. Rep., vol. 122, no. 319, ED2022-76, pp. 23-27, Dec. 2022.
Paper # ED2022-76 
Date of Issue 2022-12-12 (ED, MWPTHz) 
ISSN Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ED MWPTHz  
Conference Date 2022-12-19 - 2022-12-20 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2022-12-ED-MWPTHz 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) InP-HEMT Fabrication Process Technology for Beyond 5G Wireless Network with Tera-Hertz Band 
Sub Title (in English)  
Keyword(1) Beyond 5G (B5G) / 6G  
Keyword(2) Tera-Hertz ICs (THz-ICs)  
Keyword(3) Indium phosphide (InP)  
Keyword(4) High electron mobility transistors (HEMTs)  
Keyword(5) Backside process  
Keyword(6) 300-GHz band  
Keyword(7)  
Keyword(8)  
1st Author's Name Takuya Tsutsumi  
1st Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
2nd Author's Name Hiroshi Hamada  
2nd Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
3rd Author's Name Teruo Jyo  
3rd Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
4th Author's Name Hiroki Sugiyama  
4th Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
5th Author's Name Taro Sasaki  
5th Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
6th Author's Name Hiroyuki Takahashi  
6th Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
7th Author's Name Fumito Nakajima  
7th Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
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Speaker Author-1 
Date Time 2022-12-19 16:05:00 
Presentation Time 40 minutes 
Registration for ED 
Paper # ED2022-76, MWPTHz2022-47 
Volume (vol) vol.122 
Number (no) no.319(ED), no.320(MWPTHz) 
Page pp.23-27 
#Pages 5 
Date of Issue 2022-12-12 (ED, MWPTHz) 

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