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| Presentation | 2022-12-20 10:10 High-power resonant-tunneling-diode terahertz oscillator with thick InP conduction layer for heat dissipation and low conduction loss Hiroki Tanaka, Hidenari Fujikata, Feifan Han, Akira Ishikawa, Safumi Suzuki (Titech)  ED2022-80 MWPTHz2022-51 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Resonant tunneling diode (RTD) structure is one of the candidates for the terahertz (THz) sources. However, the output power is small, because a small RTD area must be employed due to heat destruction. In this study, the low-thermal conductive n+-InGaAs layer under the RTD layer, which disturbed heat dissipation to the substrate, was replaced by a high-thermal conductive n+-InP layer. Using this RTD structure, we fabricated THz oscillators with rectangular cavity resonator and large-area RTD. As a result, a high output power of 0.84 mW was achieved at 0.61 THz. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Terahertz (THz) Oscillator / Resonant tunneling diode (RTD) / / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 122, no. 319, ED2022-80, pp. 42-45, Dec. 2022. | |
| Paper # | ED2022-80 | |
| Date of Issue | 2022-12-12 (ED, MWPTHz) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2022-80 MWPTHz2022-51 |
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| Conference Information | |
| Committee | ED MWPTHz |
| Conference Date | 2022-12-19 - 2022-12-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2022-12-ED-MWPTHz |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-power resonant-tunneling-diode terahertz oscillator with thick InP conduction layer for heat dissipation and low conduction loss |
| Sub Title (in English) | |
| Keyword(1) | Terahertz (THz) Oscillator |
| Keyword(2) | Resonant tunneling diode (RTD) |
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| 1st Author's Name | Hiroki Tanaka |
| 1st Author's Affiliation | Tokyo Institute of Technology (Titech) |
| 2nd Author's Name | Hidenari Fujikata |
| 2nd Author's Affiliation | Tokyo Institute of Technology (Titech) |
| 3rd Author's Name | Feifan Han |
| 3rd Author's Affiliation | Tokyo Institute of Technology (Titech) |
| 4th Author's Name | Akira Ishikawa |
| 4th Author's Affiliation | Tokyo Institute of Technology (Titech) |
| 5th Author's Name | Safumi Suzuki |
| 5th Author's Affiliation | Tokyo Institute of Technology (Titech) |
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| Speaker | Author-1 |
| Date Time | 2022-12-20 10:10:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2022-80, MWPTHz2022-51 |
| Volume (vol) | vol.122 |
| Number (no) | no.319(ED), no.320(MWPTHz) |
| Page | pp.42-45 |
| #Pages | 4 |
| Date of Issue | 2022-12-12 (ED, MWPTHz) |
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