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Paper Abstract and Keywords
Presentation 2022-12-20 10:10
High-Power Resonant-Tunneling-Diode Terahertz Oscillator using Thick InP Conductive Layer for Heat Dissipation and Low Conduction Loss
Hiroki Tanaka, Hidenari Fujikata, Feifan Han, Akira Ishikawa, Safumi Suzuki (Titech) ED2022-80 MWPTHz2022-51
Abstract (in Japanese) (See Japanese page) 
(in English) Resonant tunneling diode (RTD) structure is one of the candidates for the terahertz (THz) sources. However, the output power is small, because a small RTD area must be employed due to heat destruction. In this study, the low-thermal conductive n+-InGaAs layer under the RTD layer, which disturbed heat dissipation to the substrate, was replaced by a high-thermal conductive n+-InP layer. Using this RTD structure, we fabricated THz oscillators with rectangular cavity resonator and large-area RTD. As a result, a high output power of 0.84 mW was achieved at 0.61 THz.
Keyword (in Japanese) (See Japanese page) 
(in English) Terahertz (THz) Oscillator / Resonant tunneling diode (RTD) / / / / / /  
Reference Info. IEICE Tech. Rep., vol. 122, no. 319, ED2022-80, pp. 42-45, Dec. 2022.
Paper # ED2022-80 
Date of Issue 2022-12-12 (ED, MWPTHz) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ED MWPTHz  
Conference Date 2022-12-19 - 2022-12-20 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2022-12-ED-MWPTHz 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High-Power Resonant-Tunneling-Diode Terahertz Oscillator using Thick InP Conductive Layer for Heat Dissipation and Low Conduction Loss 
Sub Title (in English)  
Keyword(1) Terahertz (THz) Oscillator  
Keyword(2) Resonant tunneling diode (RTD)  
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1st Author's Name Hiroki Tanaka  
1st Author's Affiliation Tokyo Institute of Technology (Titech)
2nd Author's Name Hidenari Fujikata  
2nd Author's Affiliation Tokyo Institute of Technology (Titech)
3rd Author's Name Feifan Han  
3rd Author's Affiliation Tokyo Institute of Technology (Titech)
4th Author's Name Akira Ishikawa  
4th Author's Affiliation Tokyo Institute of Technology (Titech)
5th Author's Name Safumi Suzuki  
5th Author's Affiliation Tokyo Institute of Technology (Titech)
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Speaker Author-1 
Date Time 2022-12-20 10:10:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2022-80, MWPTHz2022-51 
Volume (vol) vol.122 
Number (no) no.319(ED), no.320(MWPTHz) 
Page pp.42-45 
#Pages 4 
Date of Issue 2022-12-12 (ED, MWPTHz) 

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