Paper Abstract and Keywords |
Presentation |
2023-01-27 15:25
Low - pressure CVD of hexagonal BN thin films at high temperatures Taiki Oishi, Taira Watanabe, Yuki Tanaka, Katsumi Masuda, Riku Yoshioka, Kirari Masuda, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.) EID2022-8 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
To further improve quality of hexagonal boron nitride (h-BN) thin films grown on c-plane sapphire by a low - pressure chemical vapor deposition (CVD) method with BCl₃ and NH₃, we have optimized the growth conditions at higher growth temperatures, Tg, than before. At Tg = 1300 ℃, optimizing the NH₃ flow rate significantly improved the luminescence property compared to those grow at 1200 ℃. At Tg = 1400 ℃, the luminescence property was most improved at growth pressure, Pg = 7.5 kPa, which is lower than the optimal Pg of 15 kPa at 1200 and 1300 ℃. However, the improvement of film quality was not achieved at Tg = 1400 ℃. At even higher Tg, the growth conditions need to be further investigated. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
hexagonal boron nitride / CVD / thin film / excitonic luminescence / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 122, no. 366, EID2022-8, pp. 17-20, Jan. 2023. |
Paper # |
EID2022-8 |
Date of Issue |
2023-01-19 (EID) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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