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Paper Abstract and Keywords
Presentation 2023-02-07 10:45
[Invited Talk] Atomic Layer and Conformal Etching Technologies of 3D Structures in Advanced Logic and Memory Devices
Hiroto Ohtake (Hitachi High-Tech Corp.) SDM2022-86
Abstract (in Japanese) (See Japanese page) 
(in English) Isotropic atomic layer etching (ALE) has become essential technology for the fabrication of logic transistors beyond 2nm-generation and NAND memory with more than 100 layers stacking. There are several promising etching technologies for the precise isotropic ALE, like the reaction limiting process, the modification limiting process and the ligand exchange process. In this work, we summarized the various material etchings by using a dry chemical removal (DCR) tool, which has radicals from plasma and infrared lamp capability. Silicon ALE can be realized by the combination of surface oxidation and removal by HF vapor. SiO2 can be etched by the alternate flows of HF and NH3 followed by wafer heating. SiN, TiN and W can be etched in nanometer precision by using the fluorination by hydrofluorocarbon radicals and wafer heating. Co ALE can be realized by diketon exposure and wafer heating.
Keyword (in Japanese) (See Japanese page) 
(in English) Etching / Isotropic / ALE / Plasma / / / /  
Reference Info. IEICE Tech. Rep., vol. 122, no. 377, SDM2022-86, pp. 5-8, Feb. 2023.
Paper # SDM2022-86 
Date of Issue 2023-01-31 (SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2023-02-07 - 2023-02-07 
Place (in Japanese) (See Japanese page) 
Place (in English) Tokyo Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2023-02-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Atomic Layer and Conformal Etching Technologies of 3D Structures in Advanced Logic and Memory Devices 
Sub Title (in English)  
Keyword(1) Etching  
Keyword(2) Isotropic  
Keyword(3) ALE  
Keyword(4) Plasma  
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1st Author's Name Hiroto Ohtake  
1st Author's Affiliation Hitachi High-Tech Corporation (Hitachi High-Tech Corp.)
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Speaker Author-1 
Date Time 2023-02-07 10:45:00 
Presentation Time 40 minutes 
Registration for SDM 
Paper # SDM2022-86 
Volume (vol) vol.122 
Number (no) no.377 
Page pp.5-8 
#Pages 4 
Date of Issue 2023-01-31 (SDM) 

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