Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2023-03-02 13:00
A 1.6-2.2 GHz Band GaN HEMT Continuous Class-B/J Power Amplifier with Drain Efficiency Over 70%
Soushi Aonuma, Shinichi Tanaka (Shibaura Inst. of Tech.) MW2022-162
Abstract (in Japanese) (See Japanese page) 
(in English) A continuous Class-B/J amplifier can theoretically maintain the 78.5 % power efficiency of a Class-B amplifier over a wide bandwidth by controlling the impedance down to the second harmonic. In practice, however, it is difficult to ensure a stable drain efficiency (DE) of more than 70 % in the design bandwidth, which is thought to be due to the influence of parasitic elements in the FET. In this report, we have investigated how to overcome these problems by using a design method to obtain a realistic circuit solution that satisfies the theoretical conditions with genuine FETs, and also by considering the effects of third-order harmonics, which cannot be ignored due to the effects of FET parasitics. As a result, the prototype GaN HEMT amplifier exhibited good characteristics with a DE of over 70% and a stable output power of over 40 dBm in the 1.6-2.2 GHz bandwidth.
Keyword (in Japanese) (See Japanese page) 
(in English) continuous Class-B/J / wideband operation / drain efficiency / GaN / Class-J / / /  
Reference Info. IEICE Tech. Rep., vol. 122, no. 411, MW2022-162, pp. 31-36, March 2023.
Paper # MW2022-162 
Date of Issue 2023-02-23 (MW) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF MW2022-162

Conference Information
Committee MW  
Conference Date 2023-03-02 - 2023-03-03 
Place (in Japanese) (See Japanese page) 
Place (in English) Tottori Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Microwave, etc. 
Paper Information
Registration To MW 
Conference Code 2023-03-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A 1.6-2.2 GHz Band GaN HEMT Continuous Class-B/J Power Amplifier with Drain Efficiency Over 70% 
Sub Title (in English)  
Keyword(1) continuous Class-B/J  
Keyword(2) wideband operation  
Keyword(3) drain efficiency  
Keyword(4) GaN  
Keyword(5) Class-J  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Soushi Aonuma  
1st Author's Affiliation Shibaura Institute of Technology (Shibaura Inst. of Tech.)
2nd Author's Name Shinichi Tanaka  
2nd Author's Affiliation Shibaura Institute of Technology (Shibaura Inst. of Tech.)
3rd Author's Name  
3rd Author's Affiliation ()
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2023-03-02 13:00:00 
Presentation Time 25 minutes 
Registration for MW 
Paper # MW2022-162 
Volume (vol) vol.122 
Number (no) no.411 
Page pp.31-36 
#Pages 6 
Date of Issue 2023-02-23 (MW) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan