| Paper Abstract and Keywords |
| Presentation |
2023-04-11 11:00
[Invited Talk]
1 Tb 4b/Cell 176-Tier 3D NAND Flash with 4 Independent Planes for Read Tomoharu Tanaka (MMJ) ICD2023-9 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
In the presentation, a 1Tb 4b/cell 3D-NAND-Flash memory on a 176-tier technology with a 14.7Gb/mm2 bit density is shown with its innovative features. The die is organized using a 4-plane architecture for multiplane operations with a 16KB page size. The 4-plane architecture improves both program and read throughput, without increasing the die size. Periphery circuitry and page buffers are placed under the array using 5th-generation CMOS under Array (CuA) technology. To improve random read performance, a faster read is provided with a read concurrency feature, allowing four independent multiplane page read addresses. The programming operation is based on a 16-16 programming algorithm. The I/O transfer speed is 1600MT/s in ONFI4.2. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
flash memory / 3D-NAND / QLC / read concurrency / CuA / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 123, no. 1, ICD2023-9, pp. 17-17, April 2023. |
| Paper # |
ICD2023-9 |
| Date of Issue |
2023-04-03 (ICD) |
| ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Download PDF |
ICD2023-9 |
| Conference Information |
| Committee |
ICD |
| Conference Date |
2023-04-10 - 2023-04-11 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
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| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
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| Paper Information |
| Registration To |
ICD |
| Conference Code |
2023-04-ICD |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
1 Tb 4b/Cell 176-Tier 3D NAND Flash with 4 Independent Planes for Read |
| Sub Title (in English) |
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| Keyword(1) |
flash memory |
| Keyword(2) |
3D-NAND |
| Keyword(3) |
QLC |
| Keyword(4) |
read concurrency |
| Keyword(5) |
CuA |
| Keyword(6) |
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| Keyword(7) |
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| 1st Author's Name |
Tomoharu Tanaka |
| 1st Author's Affiliation |
Micron Memory Japan, K.K. (MMJ) |
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| Speaker |
Author-1 |
| Date Time |
2023-04-11 11:00:00 |
| Presentation Time |
50 minutes |
| Registration for |
ICD |
| Paper # |
ICD2023-9 |
| Volume (vol) |
vol.123 |
| Number (no) |
no.1 |
| Page |
p.17 |
| #Pages |
1 |
| Date of Issue |
2023-04-03 (ICD) |