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Paper Abstract and Keywords
Presentation 2023-04-11 14:10
[Invited Talk] NanoBridge Technology for Embedded Nonvolatile Memory
Ryusuke Nebashi, Koichiro Okamoto, Toshitsugu Sakamoto, Munehiro Tada (NBS) ICD2023-11
Abstract (in Japanese) (See Japanese page) 
(in English) NanoBridge (NB) is a kind of electrochemical resistive-change device. NBs are integrated by only two additional masks in a standard Cu-BEOL without scarifying CMOS performance. The newly developed split Cu electrode enables the lower set voltage, which have been demonstrated in a 28 nm-node. High density embedded nonvolatile NB memory macro in a 65nm technology is successfully developed with P/E=30ns/30ns programming. High yield is achieved with satisfying 30ns read, and more than 10 years retention at 150°C.
Keyword (in Japanese) (See Japanese page) 
(in English) memory / nonvolatile / CBRAM / ReRAM / conducting bridge / nanobridge / atom switch /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 1, ICD2023-11, pp. 24-28, April 2023.
Paper # ICD2023-11 
Date of Issue 2023-04-03 (ICD) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2023-11

Conference Information
Committee ICD  
Conference Date 2023-04-10 - 2023-04-11 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2023-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) NanoBridge Technology for Embedded Nonvolatile Memory 
Sub Title (in English)  
Keyword(1) memory  
Keyword(2) nonvolatile  
Keyword(3) CBRAM  
Keyword(4) ReRAM  
Keyword(5) conducting bridge  
Keyword(6) nanobridge  
Keyword(7) atom switch  
Keyword(8)  
1st Author's Name Ryusuke Nebashi  
1st Author's Affiliation NanoBridge Semiconductor, Inc (NBS)
2nd Author's Name Koichiro Okamoto  
2nd Author's Affiliation NanoBridge Semiconductor, Inc (NBS)
3rd Author's Name Toshitsugu Sakamoto  
3rd Author's Affiliation NanoBridge Semiconductor, Inc (NBS)
4th Author's Name Munehiro Tada  
4th Author's Affiliation NanoBridge Semiconductor, Inc (NBS)
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Speaker Author-1 
Date Time 2023-04-11 14:10:00 
Presentation Time 50 minutes 
Registration for ICD 
Paper # ICD2023-11 
Volume (vol) vol.123 
Number (no) no.1 
Page pp.24-28 
#Pages 5 
Date of Issue 2023-04-03 (ICD) 

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