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| Presentation | 2023-04-22 09:40 Solid-phase crystallization of Sn-doped Ge films on insulator and its application to TFT Taishiro Koga, Takaya Nagano, Kenta Moto, Keisuke Yamamoto, Taizoh Sadoh (Kyushu Univ.)  SDM2023-7 OME2023-7 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | High-speed thin-film transistors (TFTs) are required to realize advanced system-in-displays. For this purpose, Ge is attractive due to its higher carrier mobility compared with Si. However, the carrier mobility of Ge films obtained by conventional growth processes decrease with decreasing thickness. To increase the carrier mobilities of ultrathin Ge films, a novel growth technique, i.e., interface-modulated solid-phase crystallization, of Sn-doped Ge has been developed. This achieves high carrier mobility (~100 cm2/Vs) of ultrathin films (20 nm) on insulators. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Ge / Solid-Phase Crystallization / Thin-Film Transistor / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 123, no. 8, SDM2023-7, pp. 27-29, April 2023. | |
| Paper # | SDM2023-7 | |
| Date of Issue | 2023-04-14 (SDM, OME) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2023-7 OME2023-7 |
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| Conference Information | |
| Committee | SDM OME |
| Conference Date | 2023-04-21 - 2023-04-22 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawaken Seinen Kaikan |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Thin film devices (Si, compound, organic, flexible), Biotechnology, Materials, Characterization, etc. |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2023-04-SDM-OME |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Solid-phase crystallization of Sn-doped Ge films on insulator and its application to TFT |
| Sub Title (in English) | |
| Keyword(1) | Ge |
| Keyword(2) | Solid-Phase Crystallization |
| Keyword(3) | Thin-Film Transistor |
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| Keyword(8) | |
| 1st Author's Name | Taishiro Koga |
| 1st Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 2nd Author's Name | Takaya Nagano |
| 2nd Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 3rd Author's Name | Kenta Moto |
| 3rd Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 4th Author's Name | Keisuke Yamamoto |
| 4th Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 5th Author's Name | Taizoh Sadoh |
| 5th Author's Affiliation | Kyushu University (Kyushu Univ.) |
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| Speaker | Author-5 |
| Date Time | 2023-04-22 09:40:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2023-7, OME2023-7 |
| Volume (vol) | vol.123 |
| Number (no) | no.8(SDM), no.9(OME) |
| Page | pp.27-29 |
| #Pages | 3 |
| Date of Issue | 2023-04-14 (SDM, OME) |
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