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Paper Abstract and Keywords
Presentation 2023-04-22 09:40
Solid-phase crystallization of Sn-doped Ge films on insulator and its application to TFT
Taishiro Koga, Takaya Nagano, Kenta Moto, Keisuke Yamamoto, Taizoh Sadoh (Kyushu Univ.) SDM2023-7 OME2023-7
Abstract (in Japanese) (See Japanese page) 
(in English) High-speed thin-film transistors (TFTs) are required to realize advanced system-in-displays. For this purpose, Ge is attractive due to its higher carrier mobility compared with Si. However, the carrier mobility of Ge films obtained by conventional growth processes decrease with decreasing thickness. To increase the carrier mobilities of ultrathin Ge films, a novel growth technique, i.e., interface-modulated solid-phase crystallization, of Sn-doped Ge has been developed. This achieves high carrier mobility (~100 cm2/Vs) of ultrathin films (20 nm) on insulators.
Keyword (in Japanese) (See Japanese page) 
(in English) Ge / Solid-Phase Crystallization / Thin-Film Transistor / / / / /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 8, SDM2023-7, pp. 27-29, April 2023.
Paper # SDM2023-7 
Date of Issue 2023-04-14 (SDM, OME) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2023-7 OME2023-7

Conference Information
Committee SDM OME  
Conference Date 2023-04-21 - 2023-04-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawaken Seinen Kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Thin film devices (Si, compound, organic, flexible), Biotechnology, Materials, Characterization, etc. 
Paper Information
Registration To SDM 
Conference Code 2023-04-SDM-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Solid-phase crystallization of Sn-doped Ge films on insulator and its application to TFT 
Sub Title (in English)  
Keyword(1) Ge  
Keyword(2) Solid-Phase Crystallization  
Keyword(3) Thin-Film Transistor  
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1st Author's Name Taishiro Koga  
1st Author's Affiliation Kyushu University (Kyushu Univ.)
2nd Author's Name Takaya Nagano  
2nd Author's Affiliation Kyushu University (Kyushu Univ.)
3rd Author's Name Kenta Moto  
3rd Author's Affiliation Kyushu University (Kyushu Univ.)
4th Author's Name Keisuke Yamamoto  
4th Author's Affiliation Kyushu University (Kyushu Univ.)
5th Author's Name Taizoh Sadoh  
5th Author's Affiliation Kyushu University (Kyushu Univ.)
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Speaker Author-5 
Date Time 2023-04-22 09:40:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2023-7, OME2023-7 
Volume (vol) vol.123 
Number (no) no.8(SDM), no.9(OME) 
Page pp.27-29 
#Pages 3 
Date of Issue 2023-04-14 (SDM, OME) 

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