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Paper Abstract and Keywords
Presentation 2023-05-19 17:20
AlN film by reactive sputtering as a stressor for Ge photonic devices on Si
Jose A. Piedra-Lorenzana, Shohei Kaneko, Takaaki Fukushima, Keisuke Yamane (Toyohashi Univ. Tec.), Junichi Fujikata (Tokushima Univ.), Yasuhiko Ishikawa (Toyohashi Univ. Tec.) ED2023-9 CPM2023-9 SDM2023-26
Abstract (in Japanese) (See Japanese page) 
(in English) AlN deposited by reactive sputtering is studied as an external stressor for controlling the operating wavelength of near-infrared photonic devices with a Ge epitaxial layer on Si. A Ge strip structure as narrow as 1 μm is prepared by selective-area chemical vapor deposition on Si with a SiO2 mask, followed by a deposition of a poly-crystalline AlN overlayer by reactive sputtering at a low temperature of 200C. The Raman spectrum indicates a tensile strain generated by depositing the AlN film on the Ge strip. Such a tensile strain narrows the direct bandgap energy of Ge, as confirmed by the photoluminescence spectroscopy. The fundamental optical absorption edge is potentially extended longer than the wavelength of 1.55 μm in the unstrained case.
Keyword (in Japanese) (See Japanese page) 
(in English) Ge / Stressor / AlN / Si photonics / / / /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 43, SDM2023-26, pp. 36-39, May 2023.
Paper # SDM2023-26 
Date of Issue 2023-05-12 (ED, CPM, SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2023-9 CPM2023-9 SDM2023-26

Conference Information
Committee CPM ED SDM  
Conference Date 2023-05-19 - 2023-05-19 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2023-05-CPM-ED-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) AlN film by reactive sputtering as a stressor for Ge photonic devices on Si 
Sub Title (in English)  
Keyword(1) Ge  
Keyword(2) Stressor  
Keyword(3) AlN  
Keyword(4) Si photonics  
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1st Author's Name Jose A. Piedra-Lorenzana  
1st Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. Tec.)
2nd Author's Name Shohei Kaneko  
2nd Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. Tec.)
3rd Author's Name Takaaki Fukushima  
3rd Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. Tec.)
4th Author's Name Keisuke Yamane  
4th Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. Tec.)
5th Author's Name Junichi Fujikata  
5th Author's Affiliation Tokushima University (Tokushima Univ.)
6th Author's Name Yasuhiko Ishikawa  
6th Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. Tec.)
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Speaker Author-1 
Date Time 2023-05-19 17:20:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # ED2023-9, CPM2023-9, SDM2023-26 
Volume (vol) vol.123 
Number (no) no.41(ED), no.42(CPM), no.43(SDM) 
Page pp.36-39 
#Pages 4 
Date of Issue 2023-05-12 (ED, CPM, SDM) 

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