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Paper Abstract and Keywords
Presentation 2023-06-26 11:30
Characterization of ultrathin SiO2/SiC interfaces by using self-assembled monolayers
Ryo Okuhira (Kwansei Gakuin Univ.), Takamasa Kawanago (Tokyo Tech), Takuji Hosoi (Kwansei Gakuin Univ.) SDM2023-29
Abstract (in Japanese) (See Japanese page) 
(in English) We have successfully evaluated ultrathin SiO2/4H-SiC(0001) interface property by stacking self-assembled monolayer (SAM) of octadecylphosphonic acid (OPDA) on thermally grown SiO2. The conductance method revealed that the formation of ODPA-SAM film does not affect the underlying SiO2/SiC interfaces. In addition, by reducing the gate leakage current by stacking the ODPA-SAM film, the interface state density (Dit) can be obtained even for ultra-thin SiO2 films, and it was found that Dit is almost constant when the oxide film thickness is above 1.3 nm, but that Dit is lower for thinner films below 1.2 nm.
Keyword (in Japanese) (See Japanese page) 
(in English) 4H-SiC / interface state density / ultrathin gate oxide / self-assembled monolayer (SAM) / conductance method / / /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 89, SDM2023-29, pp. 7-10, June 2023.
Paper # SDM2023-29 
Date of Issue 2023-06-19 (SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2023-29

Conference Information
Committee SDM  
Conference Date 2023-06-26 - 2023-06-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Hiroshima Univ. (Res. Inst. of Nanodevices) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices, Memories, and Power Devices 
Paper Information
Registration To SDM 
Conference Code 2023-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization of ultrathin SiO2/SiC interfaces by using self-assembled monolayers 
Sub Title (in English)  
Keyword(1) 4H-SiC  
Keyword(2) interface state density  
Keyword(3) ultrathin gate oxide  
Keyword(4) self-assembled monolayer (SAM)  
Keyword(5) conductance method  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Ryo Okuhira  
1st Author's Affiliation Kwansei Gakuin University (Kwansei Gakuin Univ.)
2nd Author's Name Takamasa Kawanago  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
3rd Author's Name Takuji Hosoi  
3rd Author's Affiliation Kwansei Gakuin University (Kwansei Gakuin Univ.)
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Speaker Author-1 
Date Time 2023-06-26 11:30:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2023-29 
Volume (vol) vol.123 
Number (no) no.89 
Page pp.7-10 
#Pages 4 
Date of Issue 2023-06-19 (SDM) 

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