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Paper Abstract and Keywords
Presentation 2023-06-26 12:10
Evaluations of Crystalline Structures and Ferroelectricity of Zr/Hf-Multilayer Structures Formed by Thermal Oxidization
Yunosuke Sano (Nagoya Univ.), Taoka Noriyuki (AIT), Makihara Katsunori (Nagoya Univ.), Ohta Akio (Hukuoka Univ.), Miyazaki Seiichi (Nagoya Univ.) SDM2023-31
Abstract (in Japanese) (See Japanese page) 
(in English) The orthorhombic (O) phase of Hf oxides shows ferroelectricity even in ultra-thin films of ~5.0 nm.
However, there are some issues of formation and thermal stability because the O phase is a metastable phase.
In this study, the Hf oxides have formed by thermal oxidation of metallic Hf/metallic Zr stacked layers formed on a Si substrate.
Here, the number of the stacked layer is four and each thickness is ~1.0 nm.
After the formation, grazing incidence x-ray diffraction indicates strong signal of O/tetragonal (T) phase, although the signal related to the monoclinic (M) phase is also observed.
When the sample thermally oxidized at 750°C were subjected to post metallization annealing (PMA) at 400°C in a nitrogen atmosphere after Ni upper electrode formation, the O/tetragonal (T) phase became dominant and showed residual polarization larger than those fabricated in the other conditions.
Keyword (in Japanese) (See Japanese page) 
(in English) Hafnium / Zirconium / Ferroelectricity / Crystalline structure / Chemical bonding feature / / /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 89, SDM2023-31, pp. 15-18, June 2023.
Paper # SDM2023-31 
Date of Issue 2023-06-19 (SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2023-06-26 - 2023-06-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Hiroshima Univ. (Res. Inst. of Nanodevices) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices, Memories, and Power Devices 
Paper Information
Registration To SDM 
Conference Code 2023-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Evaluations of Crystalline Structures and Ferroelectricity of Zr/Hf-Multilayer Structures Formed by Thermal Oxidization 
Sub Title (in English)  
Keyword(1) Hafnium  
Keyword(2) Zirconium  
Keyword(3) Ferroelectricity  
Keyword(4) Crystalline structure  
Keyword(5) Chemical bonding feature  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yunosuke Sano  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Taoka Noriyuki  
2nd Author's Affiliation Aichi Institute of Technology (AIT)
3rd Author's Name Makihara Katsunori  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Ohta Akio  
4th Author's Affiliation Hukuoka University (Hukuoka Univ.)
5th Author's Name Miyazaki Seiichi  
5th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker Author-1 
Date Time 2023-06-26 12:10:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2023-31 
Volume (vol) vol.123 
Number (no) no.89 
Page pp.15-18 
#Pages 4 
Date of Issue 2023-06-19 (SDM) 

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