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Paper Abstract and Keywords
Presentation 2023-08-01 15:25
[Invited Talk] Low-Frequency Noise Source in the Cryogenic Operation of Short-Channel Bulk MOSFET
Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori (AIST) SDM2023-40 ICD2023-19
Abstract (in Japanese) (See Japanese page) 
(in English) The assignment of low-frequency noise sources in the cryogenic operation of MOSFET is of great importance because of the increasing demands of such devices for qubits controllers. This report analyzed the temperature dependence of random telegraph noise in short-channel bulk MOSFET to reveal the low-frequency noise sources. As a result, the noise sources transit from inner-oxide traps to interface traps with decreasing temperature. Furthermore, band-edge localized states, located right on the interface and have energy levels aligned to the band edge, are confirmed to be responsible for the noise at a few K.
Keyword (in Japanese) (See Japanese page) 
(in English) Cryo-CMOS / Quantum Computer / Random Telegraph Noise / Silicon / / / /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 143, SDM2023-40, pp. 22-27, Aug. 2023.
Paper # SDM2023-40 
Date of Issue 2023-07-25 (SDM, ICD) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2023-40 ICD2023-19

Conference Information
Committee SDM ICD ITE-IST  
Conference Date 2023-08-01 - 2023-08-03 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ. Multimedia Education Bldg. 3F 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications 
Paper Information
Registration To SDM 
Conference Code 2023-08-SDM-ICD-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Low-Frequency Noise Source in the Cryogenic Operation of Short-Channel Bulk MOSFET 
Sub Title (in English)  
Keyword(1) Cryo-CMOS  
Keyword(2) Quantum Computer  
Keyword(3) Random Telegraph Noise  
Keyword(4) Silicon  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Takumi Inaba  
1st Author's Affiliation National Institute of Advanced Industrial Science and Technologyf (AIST)
2nd Author's Name Hiroshi Oka  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technologyf (AIST)
3rd Author's Name Hidehiro Asai  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technologyf (AIST)
4th Author's Name Hiroshi Fuketa  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technologyf (AIST)
5th Author's Name Shota Iizuka  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technologyf (AIST)
6th Author's Name Kimihiko Kato  
6th Author's Affiliation National Institute of Advanced Industrial Science and Technologyf (AIST)
7th Author's Name Shunsuke Shitakata  
7th Author's Affiliation National Institute of Advanced Industrial Science and Technologyf (AIST)
8th Author's Name Koichi Fukuda  
8th Author's Affiliation National Institute of Advanced Industrial Science and Technologyf (AIST)
9th Author's Name Takahiro Mori  
9th Author's Affiliation National Institute of Advanced Industrial Science and Technologyf (AIST)
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Speaker Author-1 
Date Time 2023-08-01 15:25:00 
Presentation Time 45 minutes 
Registration for SDM 
Paper # SDM2023-40, ICD2023-19 
Volume (vol) vol.123 
Number (no) no.143(SDM), no.144(ICD) 
Page pp.22-27 
#Pages 6 
Date of Issue 2023-07-25 (SDM, ICD) 

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