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Paper Abstract and Keywords
Presentation 2023-11-16 09:30
Leakage-current Based Charge Accumulating Aging Sensor Circuit and Evaluation of NBTI Using Fabricated Chips
Mina Fukushima, Songxiang Wang, Kaito Nagai, Kimiyoshi Usami (SIT) VLD2023-43 ICD2023-51 DC2023-50 RECONF2023-46
Abstract (in Japanese) (See Japanese page) 
(in English) Operation failure due to BTI (Bias Temperature Instability) is a critical concern. As the pMOS threshold V_th changes over time, the amount of leakage current changes. Using this property, we propose an aging sensor circuit that detects NBTI by measuring the time it takes for charge due to leakage current to accumulate in the capacitance with a counter. Acceleration tests were conducted on a prototype chip equipped with the proposed circuit. It was observed that the time required for charge accumulation increases as the stress time is increased, due to the increase in V_th of the pMOS.
Keyword (in Japanese) (See Japanese page) 
(in English) BTI / NBTI / aging sensor / / / / /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 258, VLD2023-43, pp. 76-81, Nov. 2023.
Paper # VLD2023-43 
Date of Issue 2023-11-08 (VLD, ICD, DC, RECONF) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF VLD2023-43 ICD2023-51 DC2023-50 RECONF2023-46

Conference Information
Committee VLD DC RECONF ICD IPSJ-SLDM  
Conference Date 2023-11-15 - 2023-11-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Civic Auditorium Sears Home Yume Hall 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Design Gaia 2023 -New Field of VLSI Design- 
Paper Information
Registration To VLD 
Conference Code 2023-11-VLD-DC-RECONF-ICD-SLDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Leakage-current Based Charge Accumulating Aging Sensor Circuit and Evaluation of NBTI Using Fabricated Chips 
Sub Title (in English)  
Keyword(1) BTI  
Keyword(2) NBTI  
Keyword(3) aging sensor  
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1st Author's Name Mina Fukushima  
1st Author's Affiliation Shibaura Institute of Technology (SIT)
2nd Author's Name Songxiang Wang  
2nd Author's Affiliation Shibaura Institute of Technology (SIT)
3rd Author's Name Kaito Nagai  
3rd Author's Affiliation Shibaura Institute of Technology (SIT)
4th Author's Name Kimiyoshi Usami  
4th Author's Affiliation Shibaura Institute of Technology (SIT)
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Speaker Author-1 
Date Time 2023-11-16 09:30:00 
Presentation Time 25 minutes 
Registration for VLD 
Paper # VLD2023-43, ICD2023-51, DC2023-50, RECONF2023-46 
Volume (vol) vol.123 
Number (no) no.258(VLD), no.259(ICD), no.260(DC), no.261(RECONF) 
Page pp.76-81 
#Pages 6 
Date of Issue 2023-11-08 (VLD, ICD, DC, RECONF) 

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