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Paper Abstract and Keywords
Presentation 2023-11-30 13:55
Effects of surface treatments after gate recess etching on AlGaN/GaN MIS-HFETs with insulators formed by ALD
Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Technol.) ED2023-16 CPM2023-58 LQE2023-56
Abstract (in Japanese) (See Japanese page) 
(in English) Degradation of electrical characteristics due to etching damage during formation of recess structure has been an issue for normally-off type AlGaN/GaN MIS-HFETs with recessed gate structure using ALD-SiO2/Al2O3 double insulator. In order to improve the I/S interface after etching, we have fabricated MIS-HFETs with HCl and annealing treatments and evaluated the electrical properties. We confirmed that the RMS of the etched surface decreased to almost the same value as that before etching by the surface treatment combining HCl treatment and 500℃ annealing. Furthermore, ΔVth decreased to 0.56 V. In this study, we investigated the temperature dependence of Ig and found that the Ig was reduced by two orders of magnitude by the surface treatment and the Ig was suppressed under 5.6×10-6 mA/mm even by increasing the temperature up to 200℃. We confirmed that the surface treatment by HCl and annealing treatments is effective for the etching surface, and it is possible to fabricate devices with reduced etching damage.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / MIS / HFET / SiO2 / Al2O3 / / /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 288, ED2023-16, pp. 11-14, Nov. 2023.
Paper # ED2023-16 
Date of Issue 2023-11-23 (ED, CPM, LQE) 
ISSN Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2023-16 CPM2023-58 LQE2023-56

Conference Information
Committee LQE ED CPM  
Conference Date 2023-11-30 - 2023-12-01 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2023-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effects of surface treatments after gate recess etching on AlGaN/GaN MIS-HFETs with insulators formed by ALD 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) MIS  
Keyword(3) HFET  
Keyword(4) SiO2  
Keyword(5) Al2O3  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Toshiharu Kubo  
1st Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Technol.)
2nd Author's Name Takashi Egawa  
2nd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Technol.)
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Speaker Author-1 
Date Time 2023-11-30 13:55:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2023-16, CPM2023-58, LQE2023-56 
Volume (vol) vol.123 
Number (no) no.288(ED), no.289(CPM), no.290(LQE) 
Page pp.11-14 
#Pages 4 
Date of Issue 2023-11-23 (ED, CPM, LQE) 

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