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Paper Abstract and Keywords
Presentation 2023-11-30 15:20
Formation of p-type GaN by Mg thermal diffusion and challenges for device applications
Yuta Itoh, Hirotaka Watanabe, Manato Deki, Shugo Nitta, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2023-19 CPM2023-61 LQE2023-59
Abstract (in Japanese) (See Japanese page) 
(in English) Establishment of a localized p-type doping technique is essential to realize vertical GaN power devices. However, in Mg ion implantation, which is a typical impurity doping technique, the control of p-type conductivity is difficult because of Mg segregation defects and donor defects formed during ion implantation and recovery annealing. Therefore, we focused on the Mg thermal diffusion method, which has relatively few defects formed during doping. It has been considered that the low Mg diffusion coefficient in GaN crystals prevents Mg thermal diffusion doping from achieving a suitable diffusion length for device design. However, by using a unique Mg diffusion source, we have succeeded in enhancing the thermal diffusion of Mg, obtaining a diffusion length of several hundred nm, and fabricating and evaluating GaN that exhibits good p-type conductivity by heat treatment under atmospheric pressure. In this presentation, we report on the Mg thermal diffusion doping process and the evaluation of p-type conductivity.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / selective doping / Mg ion implantation / Mg diffsuion / p-GaN / / /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 288, ED2023-19, pp. 25-30, Nov. 2023.
Paper # ED2023-19 
Date of Issue 2023-11-23 (ED, CPM, LQE) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2023-19 CPM2023-61 LQE2023-59

Conference Information
Committee LQE ED CPM  
Conference Date 2023-11-30 - 2023-12-01 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2023-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Formation of p-type GaN by Mg thermal diffusion and challenges for device applications 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) selective doping  
Keyword(3) Mg ion implantation  
Keyword(4) Mg diffsuion  
Keyword(5) p-GaN  
Keyword(6)  
Keyword(7)  
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1st Author's Name Yuta Itoh  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Hirotaka Watanabe  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Manato Deki  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Shugo Nitta  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
5th Author's Name Atsushi Tanaka  
5th Author's Affiliation Nagoya University (Nagoya Univ.)
6th Author's Name Yoshio Honda  
6th Author's Affiliation Nagoya University (Nagoya Univ.)
7th Author's Name Hiroshi Amano  
7th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker Author-1 
Date Time 2023-11-30 15:20:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2023-19, CPM2023-61, LQE2023-59 
Volume (vol) vol.123 
Number (no) no.288(ED), no.289(CPM), no.290(LQE) 
Page pp.25-30 
#Pages 6 
Date of Issue 2023-11-23 (ED, CPM, LQE) 

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