Paper Abstract and Keywords |
Presentation |
2023-12-01 10:20
Polarization control of surface emission from c-plane InGaN quantum wells and determination of deformation potential in InGaN alloy materials Keito Mori-Tamamura, Atsushi A. Yamaguchi (Kanazawa Inst. Tech), Tomohiro Makino, Maho Ohara, Tatsushi Hamaguchi, Rintaro Koda (Sony Semiconductor Solutions) ED2023-26 CPM2023-68 LQE2023-66 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
InGaN-quantum-well (QW) based vertical-cavity surface-emitting lasers (VCSELs), which are usually fabricated on the c-plane GaN substrates, have a problem of unstable lasing polarization due to high symmetry of the c-plane crystal structure. A candidate for solving the problem is to introduce optical anisotropy by breaking the six-fold symmetry of c-plane InGaN-QWs. In this study, we propose that the anisotropic strain introduced by bending the film can induce optical anisotropy and that lasing polarization can be stabilized by this effect. Demonstrative measurements of the polarization control in c-plane InGaN-QW-based-VCSELs have been performed. Furthermore, we have determined the deformation potential D5 for InGaN alloy materials from the analysis of the experimental results. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
InGaN quantum well / VCSEL / polarization / deformation potential / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 123, no. 290, LQE2023-66, pp. 56-59, Nov. 2023. |
Paper # |
LQE2023-66 |
Date of Issue |
2023-11-23 (ED, CPM, LQE) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2023-26 CPM2023-68 LQE2023-66 |
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