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Paper Abstract and Keywords
Presentation 2023-12-01 10:20
Polarization control of surface emission from c-plane InGaN quantum wells and determination of deformation potential in InGaN alloy materials
Keito Mori-Tamamura, Atsushi A. Yamaguchi (Kanazawa Inst. Tech), Tomohiro Makino, Maho Ohara, Tatsushi Hamaguchi, Rintaro Koda (Sony Semiconductor Solutions) ED2023-26 CPM2023-68 LQE2023-66
Abstract (in Japanese) (See Japanese page) 
(in English) InGaN-quantum-well (QW) based vertical-cavity surface-emitting lasers (VCSELs), which are usually fabricated on the c-plane GaN substrates, have a problem of unstable lasing polarization due to high symmetry of the c-plane crystal structure. A candidate for solving the problem is to introduce optical anisotropy by breaking the six-fold symmetry of c-plane InGaN-QWs. In this study, we propose that the anisotropic strain introduced by bending the film can induce optical anisotropy and that lasing polarization can be stabilized by this effect. Demonstrative measurements of the polarization control in c-plane InGaN-QW-based-VCSELs have been performed. Furthermore, we have determined the deformation potential D5 for InGaN alloy materials from the analysis of the experimental results.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaN quantum well / VCSEL / polarization / deformation potential / / / /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 290, LQE2023-66, pp. 56-59, Nov. 2023.
Paper # LQE2023-66 
Date of Issue 2023-11-23 (ED, CPM, LQE) 
ISSN Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2023-26 CPM2023-68 LQE2023-66

Conference Information
Committee LQE ED CPM  
Conference Date 2023-11-30 - 2023-12-01 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2023-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Polarization control of surface emission from c-plane InGaN quantum wells and determination of deformation potential in InGaN alloy materials 
Sub Title (in English)  
Keyword(1) InGaN quantum well  
Keyword(2) VCSEL  
Keyword(3) polarization  
Keyword(4) deformation potential  
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1st Author's Name Keito Mori-Tamamura  
1st Author's Affiliation Kanazawa Institute of Technology (Kanazawa Inst. Tech)
2nd Author's Name Atsushi A. Yamaguchi  
2nd Author's Affiliation Kanazawa Institute of Technology (Kanazawa Inst. Tech)
3rd Author's Name Tomohiro Makino  
3rd Author's Affiliation Sony Semiconductor Solutions Corporation (Sony Semiconductor Solutions)
4th Author's Name Maho Ohara  
4th Author's Affiliation Sony Semiconductor Solutions Corporation (Sony Semiconductor Solutions)
5th Author's Name Tatsushi Hamaguchi  
5th Author's Affiliation Sony Semiconductor Solutions Corporation (Sony Semiconductor Solutions)
6th Author's Name Rintaro Koda  
6th Author's Affiliation Sony Semiconductor Solutions Corporation (Sony Semiconductor Solutions)
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Speaker Author-1 
Date Time 2023-12-01 10:20:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2023-26, CPM2023-68, LQE2023-66 
Volume (vol) vol.123 
Number (no) no.288(ED), no.289(CPM), no.290(LQE) 
Page pp.56-59 
#Pages 4 
Date of Issue 2023-11-23 (ED, CPM, LQE) 

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