Paper Abstract and Keywords |
Presentation |
2023-12-01 16:15
The properties of UV-B laser diodes on AlN nanopillars by using wet etching method Yoshinori Imoto, Ryosuke Kondo, Ryoya Yamada, Koki Hattori, Toma Nishibayashi, , Sho Iwayama, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ), Hideto Miyake (Mie Univ) ED2023-36 CPM2023-78 LQE2023-76 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Our groups reported that we could fabricate high quality lattice relaxed AlGaN grown on periodic AlN nanopillars.and threshold current density of laser grown on its AlGaN template decreased. In this report, We realized reduction of threshold power density by using wet etching. In addition, we will report dislocation density and internal quantum efficiency in AlGaN |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
AlN nanopillar / AlGaN / optical pumping laser / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 123, no. 290, LQE2023-76, pp. 98-101, Nov. 2023. |
Paper # |
LQE2023-76 |
Date of Issue |
2023-11-23 (ED, CPM, LQE) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2023-36 CPM2023-78 LQE2023-76 |
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