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Paper Abstract and Keywords
Presentation 2023-12-01 14:00
High thickness controllability of AlInN/GaN DBRs with in-situ reflectivity spectra measurements
Kenta Kobayashi, Ruka Watanabe, Taichi Nishikawa, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama (Meijo Univ.) ED2023-31 CPM2023-73 LQE2023-71
Abstract (in Japanese) (See Japanese page) 
(in English) In-situ layer thickness controls with in-situ reflectivity spectra measurements have been actively used in commercialized GaAs-based VCSELs, but not in GaN-based VCSELs so far. Recently, we have developed in-situ cavity length controls of GaN-based VCSELs with the above-mentioned measurements. On the other hand, in-situ center wavelength controls of bottom 40-pair AlInN/GaN DBRs have not yet been performed. In this study, we investigated the in-situ center wavelength controls of the 40-pair AlInN/GaN DBRs with the in-situ reflectivity spectra measurements. We first estimated that ±2% center wavelength deviations due to the run-to-run growth rate variations could be adjusted after the 5-pair DBR growth within the 5% increase of VCSEL mirror loss according to our reflectivity simulation. In order to demonstrate the controllability, ±2% thickness adjustments toward the target center wavelength were performed after the 5-pair DBR growths, resulting in the accuracy within the ±0.3% error after the 40-pair DBR growths.
Keyword (in Japanese) (See Japanese page) 
(in English) VCSEL / DBR / in-situ reflectivity spectra measurement / / / / /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 290, LQE2023-71, pp. 76-79, Nov. 2023.
Paper # LQE2023-71 
Date of Issue 2023-11-23 (ED, CPM, LQE) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2023-31 CPM2023-73 LQE2023-71

Conference Information
Committee LQE ED CPM  
Conference Date 2023-11-30 - 2023-12-01 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2023-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High thickness controllability of AlInN/GaN DBRs with in-situ reflectivity spectra measurements 
Sub Title (in English)  
Keyword(1) VCSEL  
Keyword(2) DBR  
Keyword(3) in-situ reflectivity spectra measurement  
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1st Author's Name Kenta Kobayashi  
1st Author's Affiliation Meijo University (Meijo Univ.)
2nd Author's Name Ruka Watanabe  
2nd Author's Affiliation Meijo University (Meijo Univ.)
3rd Author's Name Taichi Nishikawa  
3rd Author's Affiliation Meijo University (Meijo Univ.)
4th Author's Name Tetsuya Takeuchi  
4th Author's Affiliation Meijo University (Meijo Univ.)
5th Author's Name Motoaki Iwaya  
5th Author's Affiliation Meijo University (Meijo Univ.)
6th Author's Name Satoshi Kamiyama  
6th Author's Affiliation Meijo University (Meijo Univ.)
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Speaker Author-1 
Date Time 2023-12-01 14:00:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2023-31, CPM2023-73, LQE2023-71 
Volume (vol) vol.123 
Number (no) no.288(ED), no.289(CPM), no.290(LQE) 
Page pp.76-79 
#Pages 4 
Date of Issue 2023-11-23 (ED, CPM, LQE) 

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