IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2023-12-22 15:20
[Poster Presentation] Large area growth of c-axis tilted Sc0.4Al0.6N thin films using planar sputtering with rectangular cathode
Naoki Ishii, Yhoho Shimano, Takahiko Yanagitani (Waseda Univ.) US2023-65
Abstract (in Japanese) (See Japanese page) 
(in English) c-axis normal ScAlN thin films with Sc concentration exceeding 40% possess high thickness extensional mode electromechanical coupling coefficient kt2. Therefore, the Sc0.4Al0.6N films are promising for BAW filter and pMUT applications. On the other hand, c-axis tilted ScAlN thin film also exhibits a high quasi thickness shear mode k'352. This feature is attractive for improving the signal-to-noise ratio of thin film resonator type sensors operating in liquids. Large area uniformity in film thickness and c-axis tilt angle within the wafer are required for both c-axis normal and tilted films. In this study, c-axis normal Sc0.4Al0.6N and c-axis tilted Sc0.4Al0.6N thin films were grown by a planar RF magnetron sputtering using a rectangular or circular cathode. c-Axis tilt angle and orientation of in the wafer were measured by X-ray pole figure. As a result, both c-axis normal and c-axis tilted ScAlN films showed good uniformity in c-axis tilt angle for a rectangular cathode compared with that for a circular cathode. Electromechanical coupling coefficients kt2 and k’352 of c-axis normal and tilted ScAlN films were estimated using conversion loss method. For c-axis normal films, kt2 = 16% and kt2 = 14% were obtained for the rectangular cathode films and the circular cathode films, respectively. For c-axis tilted films, both circular cathode films and rectangle cathode films exhibit k’352 of 18%.
Keyword (in Japanese) (See Japanese page) 
(in English) Rectangular cathode / BAW filter / Sc0.4Al0.6N / AOG less film growt / c-axis tilted ScAlN thin films / / /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 321, US2023-65, pp. 53-58, Dec. 2023.
Paper # US2023-65 
Date of Issue 2023-12-15 (US) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF US2023-65

Conference Information
Committee EA US  
Conference Date 2023-12-22 - 2023-12-23 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English) [Joint Meeting on Acoustics and Ultrasonics Subsociety] Engineering/Electro Acoustics, Ultrasonics, etc. 
Paper Information
Registration To US 
Conference Code 2023-12-EA-US 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Large area growth of c-axis tilted Sc0.4Al0.6N thin films using planar sputtering with rectangular cathode 
Sub Title (in English)  
Keyword(1) Rectangular cathode  
Keyword(2) BAW filter  
Keyword(3) Sc0.4Al0.6N  
Keyword(4) AOG less film growt  
Keyword(5) c-axis tilted ScAlN thin films  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Naoki Ishii  
1st Author's Affiliation Waseda University (Waseda Univ.)
2nd Author's Name Yhoho Shimano  
2nd Author's Affiliation Waseda University (Waseda Univ.)
3rd Author's Name Takahiko Yanagitani  
3rd Author's Affiliation Waseda University (Waseda Univ.)
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2023-12-22 15:20:00 
Presentation Time 120 minutes 
Registration for US 
Paper # US2023-65 
Volume (vol) vol.123 
Number (no) no.321 
Page pp.53-58 
#Pages 6 
Date of Issue 2023-12-15 (US) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan