講演抄録/キーワード |
講演名 |
2024-01-16 14:50
自己組織化単分子膜を利用した金属酸化物抵抗変化型メモリの抵抗変化挙動の制御 ○中野正浩・松井裕輝・Md. Shahiduzzaman・當摩哲也・辛川 誠(金沢大) OME2023-80 |
抄録 |
(和) |
(まだ登録されていません) |
(英) |
We explored how self-assembled monolayers (SAMs) affect the resistive changing behavior in metal oxides-based resistive changing memories. The resistive switching voltages of SAM-modified zinc oxide (ZnO)-based memory devices (ITO/ZnO-SAM/Al) were shifted from that of bare ZnO depending on the surface dipole induced by SAMs. The ZnO-based devices with methylaminopropyl-substituted SAMs exhibited a lower switching voltage (1.6 V) compared to unmodified ZnO-based ones (2.9 V). Moreover, the on/off ratio was also improved by SAM modification (from 102 to 104). We also found that SAM-modification can influence resistive changing voltages in cycling set and reset behavior of resistive changing memories, as evidenced by our experiments with zirconium dioxide (ZrO2)-based memory devices with SAMs. |
キーワード |
(和) |
/ / / / / / / |
(英) |
Metal oxide / Self-assembled monolayer / interface / resistive switching memory / / / / |
文献情報 |
信学技報, vol. 123, no. 333, OME2023-80, pp. 13-17, 2024年1月. |
資料番号 |
OME2023-80 |
発行日 |
2024-01-09 (OME) |
ISSN |
Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
OME2023-80 |