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Paper Abstract and Keywords
Presentation 2024-01-16 14:50
Control of the Resistive Switching Behavior of Metal Oxide-based Resistive Memories by Using Self-Assembled Monolayers
Masahiro Nakano (Kanazawa Univ.), Hiroki Matsui, Md. Shahiduzzaman, Tetsuya Taima, Makoto Karakawa (anazawa Univ.) OME2023-80
Abstract (in Japanese) (See Japanese page) 
(in English) We explored how self-assembled monolayers (SAMs) affect the resistive changing behavior in metal oxides-based resistive changing memories. The resistive switching voltages of SAM-modified zinc oxide (ZnO)-based memory devices (ITO/ZnO-SAM/Al) were shifted from that of bare ZnO depending on the surface dipole induced by SAMs. The ZnO-based devices with methylaminopropyl-substituted SAMs exhibited a lower switching voltage (1.6 V) compared to unmodified ZnO-based ones (2.9 V). Moreover, the on/off ratio was also improved by SAM modification (from 102 to 104). We also found that SAM-modification can influence resistive changing voltages in cycling set and reset behavior of resistive changing memories, as evidenced by our experiments with zirconium dioxide (ZrO2)-based memory devices with SAMs.
Keyword (in Japanese) (See Japanese page) 
(in English) Metal oxide / Self-assembled monolayer / interface / resistive switching memory / / / /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 333, OME2023-80, pp. 13-17, Jan. 2024.
Paper # OME2023-80 
Date of Issue 2024-01-09 (OME) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee OME  
Conference Date 2024-01-16 - 2024-01-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Organic thin films, Organic devices, Bio-devices, etc. 
Paper Information
Registration To OME 
Conference Code 2024-01-OME 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Control of the Resistive Switching Behavior of Metal Oxide-based Resistive Memories by Using Self-Assembled Monolayers 
Sub Title (in English)  
Keyword(1) Metal oxide  
Keyword(2) Self-assembled monolayer  
Keyword(3) interface  
Keyword(4) resistive switching memory  
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Keyword(6)  
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1st Author's Name Masahiro Nakano  
1st Author's Affiliation Kanazawa University (Kanazawa Univ.)
2nd Author's Name Hiroki Matsui  
2nd Author's Affiliation Kanazawa University (anazawa Univ.)
3rd Author's Name Md. Shahiduzzaman  
3rd Author's Affiliation Kanazawa University (anazawa Univ.)
4th Author's Name Tetsuya Taima  
4th Author's Affiliation Kanazawa University (anazawa Univ.)
5th Author's Name Makoto Karakawa  
5th Author's Affiliation Kanazawa University (anazawa Univ.)
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Speaker Author-1 
Date Time 2024-01-16 14:50:00 
Presentation Time 25 minutes 
Registration for OME 
Paper # OME2023-80 
Volume (vol) vol.123 
Number (no) no.333 
Page pp.13-17 
#Pages 5 
Date of Issue 2024-01-09 (OME) 

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