Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2024-01-25 15:55
Development of GaN HEMT using a diamond substrate as a heat spreader
Yusuke Shirayanagi (Mitsubishi Electric/Kumamoto Univ.), Shingo Tomohisa (Mitsubishi Electric), Keiji Kasamura, Hiroki Toyoda (Kumamoto Univ.), Takashi Matsumae, Yuichi Kurashima, Hideki Takagi (AIST), Akihisa Kubota (Kumamoto Univ.), Takashi Takenaga (Mitsubishi Electric) ED2023-69 MW2023-161
Abstract (in Japanese) (See Japanese page) 
(in English) 1-inch size GaN-on-Diamond high electron mobility transistors (GoD HEMTs) has been successfully fabricated using surface-activated room-temperature bonding of a substrate where GaN HEMTs are formed on mosaic diamond substrate. The bonding area of over 95% is achieved due to the limited surface average roughness of less than 0.3nm for both bonding substrate surfaces. The drain current (Id) - drain voltage (Vd) characteristics indicates that GaN HEMTs have been transferred on the diamond substrate without any negative effects of the bonding step. The 2D-temperature mapping results demonstrate drastic suppression of temperature rising during transistor-operation due to the effective heat dissipation through the mosaic diamond substrate.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / HEMT / Diamond / Bonding / Polishing / GaN-on-Diamond / /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 365, ED2023-69, pp. 15-18, Jan. 2024.
Paper # ED2023-69 
Date of Issue 2024-01-18 (ED, MW) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2023-69 MW2023-161

Conference Information
Committee ED MW  
Conference Date 2024-01-25 - 2024-01-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2024-01-ED-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Development of GaN HEMT using a diamond substrate as a heat spreader 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) HEMT  
Keyword(3) Diamond  
Keyword(4) Bonding  
Keyword(5) Polishing  
Keyword(6) GaN-on-Diamond  
Keyword(7)  
Keyword(8)  
1st Author's Name Yusuke Shirayanagi  
1st Author's Affiliation Mitsubishi Electric Corporation/Kumamoto University (Mitsubishi Electric/Kumamoto Univ.)
2nd Author's Name Shingo Tomohisa  
2nd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
3rd Author's Name Keiji Kasamura  
3rd Author's Affiliation Kumamoto University (Kumamoto Univ.)
4th Author's Name Hiroki Toyoda  
4th Author's Affiliation Kumamoto University (Kumamoto Univ.)
5th Author's Name Takashi Matsumae  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
6th Author's Name Yuichi Kurashima  
6th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
7th Author's Name Hideki Takagi  
7th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
8th Author's Name Akihisa Kubota  
8th Author's Affiliation Kumamoto University (Kumamoto Univ.)
9th Author's Name Takashi Takenaga  
9th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2024-01-25 15:55:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2023-69, MW2023-161 
Volume (vol) vol.123 
Number (no) no.365(ED), no.366(MW) 
Page pp.15-18 
#Pages 4 
Date of Issue 2024-01-18 (ED, MW) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan