Paper Abstract and Keywords |
Presentation |
2024-01-31 12:35
[Invited Talk]
Milli-Kelvin Analysis Revealing the Role of Band-edge States in Cryogenic MOSFETs Hiroshi Oka, Hidehiro Asai, Takumi Inaba, Shunsuke Shitakata, Hitoshi Yui, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Takashi Nakayama, Takahiro Mori (AIST) SDM2023-74 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Toward large-scale quantum computers, cryogenic CMOS circuits have been developed to control and readout the qubits inside the refrigerator. Since the cryogenic CMOS circuits are operated at 4 K stage in the refrigerator, understanding on the cryogenic performance of MOSFETs is important. At cryogenic temperatures, various parameters of MOSFETs deviate from the extrapolation of conventional model, which is especially noticeable in the subthreshold swing (SS) as discrepant from the temperature-proportional law. However, the physical mechanism of cryo-specific performance of MOSFETs is still not fully understood. In this study, we examined the mK temperature analysis of MOSFETs to elucidate the governing factor of SS and operation mechanism of cryogenic MOSFETs. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Quantum computer / Cryogenic CMOS / Subthreshold swing / mK temperature / Band-edge state / / / |
Reference Info. |
IEICE Tech. Rep., vol. 123, no. 375, SDM2023-74, pp. 1-4, Jan. 2024. |
Paper # |
SDM2023-74 |
Date of Issue |
2024-01-24 (SDM) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2023-74 |
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