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Presentation 2024-01-31 12:35
[Invited Talk] Milli-Kelvin Analysis Revealing the Role of Band-edge States in Cryogenic MOSFETs
Hiroshi Oka, Hidehiro Asai, Takumi Inaba, Shunsuke Shitakata, Hitoshi Yui, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Takashi Nakayama, Takahiro Mori (AIST) SDM2023-74
Abstract (in Japanese) (See Japanese page) 
(in English) Toward large-scale quantum computers, cryogenic CMOS circuits have been developed to control and readout the qubits inside the refrigerator. Since the cryogenic CMOS circuits are operated at 4 K stage in the refrigerator, understanding on the cryogenic performance of MOSFETs is important. At cryogenic temperatures, various parameters of MOSFETs deviate from the extrapolation of conventional model, which is especially noticeable in the subthreshold swing (SS) as discrepant from the temperature-proportional law. However, the physical mechanism of cryo-specific performance of MOSFETs is still not fully understood. In this study, we examined the mK temperature analysis of MOSFETs to elucidate the governing factor of SS and operation mechanism of cryogenic MOSFETs.
Keyword (in Japanese) (See Japanese page) 
(in English) Quantum computer / Cryogenic CMOS / Subthreshold swing / mK temperature / Band-edge state / / /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 375, SDM2023-74, pp. 1-4, Jan. 2024.
Paper # SDM2023-74 
Date of Issue 2024-01-24 (SDM) 
ISSN Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2024-01-31 - 2024-01-31 
Place (in Japanese) (See Japanese page) 
Place (in English) KIT Toranomon Graduate School 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Advanced semiconductor devices and processes (Special feature on IEDM) 
Paper Information
Registration To SDM 
Conference Code 2024-01-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Milli-Kelvin Analysis Revealing the Role of Band-edge States in Cryogenic MOSFETs 
Sub Title (in English)  
Keyword(1) Quantum computer  
Keyword(2) Cryogenic CMOS  
Keyword(3) Subthreshold swing  
Keyword(4) mK temperature  
Keyword(5) Band-edge state  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hiroshi Oka  
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
2nd Author's Name Hidehiro Asai  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Takumi Inaba  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Shunsuke Shitakata  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Hitoshi Yui  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
6th Author's Name Hiroshi Fuketa  
6th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
7th Author's Name Shota Iizuka  
7th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
8th Author's Name Kimihiko Kato  
8th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
9th Author's Name Takashi Nakayama  
9th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
10th Author's Name Takahiro Mori  
10th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
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Speaker Author-1 
Date Time 2024-01-31 12:35:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2023-74 
Volume (vol) vol.123 
Number (no) no.375 
Page pp.1-4 
#Pages
Date of Issue 2024-01-24 (SDM) 


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