Paper Abstract and Keywords |
Presentation |
2024-02-21 10:45
[Invited Talk]
Development of Superconducting Nb Interconnects for Low-Temperature SoC for Qubit Control Hideaki Numata, Noriyuki Iguchi (NBS), Masamitsu Tanaka (Nagoya Univ.), Koichiro Okamoto, Sadahiko Miura (NBS), Ken Uchida (UTokyo), Hiroki Ishikuro (Keio Univ.), Toshitsugu Sakamoto, Munehiro Tada (NBS) SDM2023-82 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A 100 nm wide superconducting Nb interconnects were fabricated by a 300-mm wafer process for low temperature SoC applications. A low pressure and long throw sputtering was adopted for the Nb deposition, resulting in good superconductivity of the 50 nm thick Nb film with a critical temperature (Tc) of 8.3 K. The interconnects had a TiN/Nb stack structure, and a double layer hard mask was used for dry etching process. The 25 nm TiN layer well protected the Nb film from plasma damage during the fabrication, then the developed 100 nm wide Nb interconnect showed good superconductivity with a Tc of 7.8 K and a critical current of 3.2 mA at 4.2 K. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Superconductor / Nb / Interconnect / Dry Etching / Cryo-CMOS / / / |
Reference Info. |
IEICE Tech. Rep., vol. 123, no. 385, SDM2023-82, pp. 4-8, Feb. 2024. |
Paper # |
SDM2023-82 |
Date of Issue |
2024-02-14 (SDM) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2023-82 |
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