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Paper Abstract and Keywords
Presentation 2024-05-24 16:15
Performance Analysis of Wide Band-gap Semiconductor SBD for Microwave Power Transmission
Yasuo Ohno, Hiroko Itoh, Tomomi Hiraoka (Laser Systems), Masataka Higashiwaki (Osaka Metropolitan Univ.) ED2024-10 CPM2024-10 SDM2024-17
Abstract (in Japanese) (See Japanese page) 
(in English) Circuit characteristics of Schottky barrier diodes used in microwave power receiving circuits were analyzed. In high-frequency rectifier circuits, there are losses due to displacement current to the depletion layer capacitance even when the diode is off, in addition to DC losses in the drift layer resistance and barrier. We modeled the losses during the on-state and off-state and optimized the drift layer design by considering the material properties. For diodes with the same DC resistance, the higher the breakdown field strength, the smaller the depletion layer capacitance, and the lower the loss at high frequencies. As a result, wide-gap semiconductors exhibit high RF/DC conversion efficiency at frequencies above the GHz band.
Keyword (in Japanese) (See Japanese page) 
(in English) wide band-gap semiconductor / Schottky barrier diode / rectifier circuit / rectenna / / / /  
Reference Info. IEICE Tech. Rep., vol. 124, no. 43, ED2024-10, pp. 33-36, May 2024.
Paper # ED2024-10 
Date of Issue 2024-05-16 (ED, CPM, SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2024-10 CPM2024-10 SDM2024-17

Conference Information
Committee ED SDM CPM  
Conference Date 2024-05-24 - 2024-05-24 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2024-05-ED-SDM-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Performance Analysis of Wide Band-gap Semiconductor SBD for Microwave Power Transmission 
Sub Title (in English)  
Keyword(1) wide band-gap semiconductor  
Keyword(2) Schottky barrier diode  
Keyword(3) rectifier circuit  
Keyword(4) rectenna  
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Keyword(6)  
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1st Author's Name Yasuo Ohno  
1st Author's Affiliation Laser Systems Inc. (Laser Systems)
2nd Author's Name Hiroko Itoh  
2nd Author's Affiliation Laser Systems Inc. (Laser Systems)
3rd Author's Name Tomomi Hiraoka  
3rd Author's Affiliation Laser Systems Inc. (Laser Systems)
4th Author's Name Masataka Higashiwaki  
4th Author's Affiliation Osaka Metropolitan University (Osaka Metropolitan Univ.)
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Speaker Author-1 
Date Time 2024-05-24 16:15:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2024-10, CPM2024-10, SDM2024-17 
Volume (vol) vol.124 
Number (no) no.43(ED), no.44(CPM), no.45(SDM) 
Page pp.33-36 
#Pages 4 
Date of Issue 2024-05-16 (ED, CPM, SDM) 

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