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Paper Abstract and Keywords
Presentation 2024-05-24 15:50
Improvement of Sensitivity for Power Cycle Degradation by A New Device Structure
Koki Okame, Yuki Yamakita, Shin-ichi Nishizawa, Wataru Saito (Kyushu Univ) ED2024-9 CPM2024-9 SDM2024-16
Abstract (in Japanese) (See Japanese page) 
(in English) This paper reports a demonstration of a new sensor device structure designed to increase the current change for detecting power cycle degradation. The sensor device consists of a Schottky barrier MISFET. Power cycling degradation is detected by a decrease in the drain current of the SB-MISFET, as repetitive mechanical stress increases the interface state density of the MIS gate. The sensor devices demonstrated the basic operation of a decrease in drain current due to repetitive mechanical stress. However, the change in current was only 4 to 5 times smaller than initial current. In this study, it is clarified that this current change is limited by leakage current, and a new structure is proposed to suppress this leakage current. The proposed structure achieved a current change 12 to 13 times smaller than the initial current, due to the leakage current 1/8 times smaller compared to the conventional structure.
Keyword (in Japanese) (See Japanese page) 
(in English) Reliability / power cycle degradation / Mechanical stress / SB - MISFET / power cycle test / / /  
Reference Info. IEICE Tech. Rep., vol. 124, no. 43, ED2024-9, pp. 29-32, May 2024.
Paper # ED2024-9 
Date of Issue 2024-05-16 (ED, CPM, SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2024-9 CPM2024-9 SDM2024-16

Conference Information
Committee ED SDM CPM  
Conference Date 2024-05-24 - 2024-05-24 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2024-05-ED-SDM-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Improvement of Sensitivity for Power Cycle Degradation by A New Device Structure 
Sub Title (in English)  
Keyword(1) Reliability  
Keyword(2) power cycle degradation  
Keyword(3) Mechanical stress  
Keyword(4) SB - MISFET  
Keyword(5) power cycle test  
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1st Author's Name Koki Okame  
1st Author's Affiliation Kyushu University (Kyushu Univ)
2nd Author's Name Yuki Yamakita  
2nd Author's Affiliation Kyushu University (Kyushu Univ)
3rd Author's Name Shin-ichi Nishizawa  
3rd Author's Affiliation Kyushu University (Kyushu Univ)
4th Author's Name Wataru Saito  
4th Author's Affiliation Kyushu University (Kyushu Univ)
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Speaker Author-1 
Date Time 2024-05-24 15:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2024-9, CPM2024-9, SDM2024-16 
Volume (vol) vol.124 
Number (no) no.43(ED), no.44(CPM), no.45(SDM) 
Page pp.29-32 
#Pages 4 
Date of Issue 2024-05-16 (ED, CPM, SDM) 

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