Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2024-06-06 15:00
High rate RF sputtering of MgO underlayer by hot cathode method with porous target for heat assisted magnetic recording media
Kota Yamada, Daiki Miyazaki, Yuki Hirokawa, Seong-Jae Jeon, Akihiro Shimizu (Tohoku Univ.), Kosaku Iwatani (TOSHIMA Manufacturing Co., Ltd.), Shintaro Hinata, Tomoyuki Ogawa, Shin Saito (Tohoku Univ.) MRIS2024-3
Abstract (in Japanese) (See Japanese page) 
(in English) A high thermal stress tolerant target for hot cathode RF sputtering is proposed for high rate deposition of MgO underlayer for heat assisted magnetic recording media. Porous structure is proposed that mitigates thermal stress at various locations in the target. Targets were prepared by mixing MgO powder with pore forming material, first baking off the resin in air to secure vacancies, and then sintering the MgO by raising the temperature to ${1600}^circ$C. By appropriately selecting material and its diameter of the pore forming material, and sintering temperature, it was possible to leave vacancies in the target after sintering. Furthermore, the deposition rate of the hot cathode sputtering with the porous MgO target that had a pore diameter of 150 $mu$m was 0.71 nm/s, which was 3.6 times faster than the normal cold cathode sputtering with the MgO target with Cu backing plate.
Keyword (in Japanese) (See Japanese page) 
(in English) RF sputtering / hot cathode / MgO thin film / high rate deposition / pore forming material / porous structure target / high thermal stress tolerant /  
Reference Info. IEICE Tech. Rep., vol. 124, no. 67, MRIS2024-3, pp. 12-17, June 2024.
Paper # MRIS2024-3 
Date of Issue 2024-05-30 (MRIS) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF MRIS2024-3

Conference Information
Committee MRIS ITE-MMS  
Conference Date 2024-06-06 - 2024-06-07 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ., RIEC 
Topics (in Japanese) (See Japanese page) 
Topics (in English) recording system/head/media, etc. 
Paper Information
Registration To MRIS 
Conference Code 2024-06-MRIS-MMS 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High rate RF sputtering of MgO underlayer by hot cathode method with porous target for heat assisted magnetic recording media 
Sub Title (in English)  
Keyword(1) RF sputtering  
Keyword(2) hot cathode  
Keyword(3) MgO thin film  
Keyword(4) high rate deposition  
Keyword(5) pore forming material  
Keyword(6) porous structure target  
Keyword(7) high thermal stress tolerant  
Keyword(8)  
1st Author's Name Kota Yamada  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Daiki Miyazaki  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Yuki Hirokawa  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Seong-Jae Jeon  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Akihiro Shimizu  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Kosaku Iwatani  
6th Author's Affiliation TOSHIMA Manufacturing Co., Ltd. (TOSHIMA Manufacturing Co., Ltd.)
7th Author's Name Shintaro Hinata  
7th Author's Affiliation Tohoku University (Tohoku Univ.)
8th Author's Name Tomoyuki Ogawa  
8th Author's Affiliation Tohoku University (Tohoku Univ.)
9th Author's Name Shin Saito  
9th Author's Affiliation Tohoku University (Tohoku Univ.)
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2024-06-06 15:00:00 
Presentation Time 25 minutes 
Registration for MRIS 
Paper # MRIS2024-3 
Volume (vol) vol.124 
Number (no) no.67 
Page pp.12-17 
#Pages 6 
Date of Issue 2024-05-30 (MRIS) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan