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Paper Abstract and Keywords
Presentation 2024-06-21 11:35
[Invited Talk] First-Principles Prediction on NO Annealing Effect to SiC(0001) Step Interface
Mitsuharu Uemoto, Nahoto Funaki (Kobe Univ.), Takuji Hosoi (Kwansei Univ.), Tomoya Ono (Kobe Univ.) SDM2024-20
Abstract (in Japanese) (See Japanese page) 
(in English) In this study, we work out the first-principles analysis on the effects of NO annealing at the MOS interface of 4H-SiC and SiO2 with atomic-scale step structures. At the MOS interface before nitridation, conduction band edge levels, representing the inversion layer, have discontinuities near the step edges, which is considered to increase channel resistance and degrade device performance. Our results suggest incorporating a nitrided layer on the interfaces reduces these discontinuities and improves channel resistance.
Keyword (in Japanese) (See Japanese page) 
(in English) 4H-SiC / NO annealing / First-principles calculation / / / / /  
Reference Info. IEICE Tech. Rep., vol. 124, no. 87, SDM2024-20, pp. 5-8, June 2024.
Paper # SDM2024-20 
Date of Issue 2024-06-14 (SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2024-20

Conference Information
Committee SDM  
Conference Date 2024-06-21 - 2024-06-21 
Place (in Japanese) (See Japanese page) 
Place (in English) Kwansei Gakuin Univ., Umeda Campus 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices, Memories, and Power Devices 
Paper Information
Registration To SDM 
Conference Code 2024-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) First-Principles Prediction on NO Annealing Effect to SiC(0001) Step Interface 
Sub Title (in English)  
Keyword(1) 4H-SiC  
Keyword(2) NO annealing  
Keyword(3) First-principles calculation  
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1st Author's Name Mitsuharu Uemoto  
1st Author's Affiliation Kobe University (Kobe Univ.)
2nd Author's Name Nahoto Funaki  
2nd Author's Affiliation Kobe University (Kobe Univ.)
3rd Author's Name Takuji Hosoi  
3rd Author's Affiliation Kwansei Gakuin University (Kwansei Univ.)
4th Author's Name Tomoya Ono  
4th Author's Affiliation Kobe University (Kobe Univ.)
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Speaker Author-1 
Date Time 2024-06-21 11:35:00 
Presentation Time 35 minutes 
Registration for SDM 
Paper # SDM2024-20 
Volume (vol) vol.124 
Number (no) no.87 
Page pp.5-8 
#Pages 4 
Date of Issue 2024-06-14 (SDM) 

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