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Paper Abstract and Keywords
Presentation 2024-06-21 14:00
[Invited Talk] Demonstration of AlN-Based Vertical p-n Diodes with Distributed Polarization Doping
Takeru Kumabe (Nagoya Univ.), Akira Yoshikawa (Asahi Kasei), Seiya Kawasaki, Maki Kushimoto, Yoshio Honda, Manabu Arai, Jun Suda, Hiroshi Amano (Nagoya Univ.) SDM2024-22
Abstract (in Japanese) (See Japanese page) 
(in English) AlN and high-Al-content AlGaN attract great attention as materials for next-generation electronic device applications. Although the p-n junction is a fundamental building block of semiconductor devices, no AlN-based p-n diodes had exhibited ideal electrical properties due to the difficulty in controlling conductivity through conventional impurity doping. To date, we have demonstrated near-ideal AlN-based p-n diodes by utilizing the polarization effects in nitride semiconductors to control the conductivity of high-Al-content AlGaN. In this paper, we report on the basics of "polarization doping" in nitride semiconductor and its application to AlN-based vertical p-n diodes.
Keyword (in Japanese) (See Japanese page) 
(in English) Aluminum Nitride / Power semiconductor devices / Conductivity control / Polarization doping / / / /  
Reference Info. IEICE Tech. Rep., vol. 124, no. 87, SDM2024-22, pp. 13-16, June 2024.
Paper # SDM2024-22 
Date of Issue 2024-06-14 (SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2024-22

Conference Information
Committee SDM  
Conference Date 2024-06-21 - 2024-06-21 
Place (in Japanese) (See Japanese page) 
Place (in English) Kwansei Gakuin Univ., Umeda Campus 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices, Memories, and Power Devices 
Paper Information
Registration To SDM 
Conference Code 2024-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Demonstration of AlN-Based Vertical p-n Diodes with Distributed Polarization Doping 
Sub Title (in English)  
Keyword(1) Aluminum Nitride  
Keyword(2) Power semiconductor devices  
Keyword(3) Conductivity control  
Keyword(4) Polarization doping  
Keyword(5)  
Keyword(6)  
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1st Author's Name Takeru Kumabe  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Akira Yoshikawa  
2nd Author's Affiliation Asahi Kasei Corporation (Asahi Kasei)
3rd Author's Name Seiya Kawasaki  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Maki Kushimoto  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
5th Author's Name Yoshio Honda  
5th Author's Affiliation Nagoya University (Nagoya Univ.)
6th Author's Name Manabu Arai  
6th Author's Affiliation Nagoya University (Nagoya Univ.)
7th Author's Name Jun Suda  
7th Author's Affiliation Nagoya University (Nagoya Univ.)
8th Author's Name Hiroshi Amano  
8th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker Author-1 
Date Time 2024-06-21 14:00:00 
Presentation Time 35 minutes 
Registration for SDM 
Paper # SDM2024-22 
Volume (vol) vol.124 
Number (no) no.87 
Page pp.13-16 
#Pages 4 
Date of Issue 2024-06-14 (SDM) 

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