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Paper Abstract and Keywords
Presentation 2024-08-23 14:15
Fabrication and Characterization of Indium Oxide Thin-Film Transistors using Excimer Light Assist Process
Ryosuke Kasahara, Takeaki Komai, Hideo Wada, Masatoshi Koyama, Akihiko Fujii (Osaka Inst. of Tech.), Akihiro Shimizu, Noritaka Takezoe, Shion Yamaguchi, Hiroyasu Ito (Ushio Inc.), Toshihiko Maemoto (Osaka Inst. of Tech.) ED2024-15
Abstract (in Japanese) (See Japanese page) 
(in English) Indium oxide (In2O3) thin-films exhibit higher electron mobility and lower off-leakage compared to Low-Temperature Polycrystalline Silicon (LTPS), making them promising candidates for next-generation OLED displays. We have fabricated In2O3 thin-film transistors (TFTs) using a solution method with a carbon-free aqueous solution-based precursor and excimer light, and have characterized the transfer characteristics of TFTs. In this report, we describe the successful fabrication of an In2O3-TFT with an off-leak current of 7.2×10^-13 A/um, an on/off ratio of 5.9×10^6, and a field-effect mobility of 28 cm^2/Vs. Additionally, we confirmed the effectiveness of introducing excimer light in processes below 300℃.
Keyword (in Japanese) (See Japanese page) 
(in English) Oxide Semiconductor / Indium Oxide / Thin-Film Transistor / Solution Process / Excimer Lamp / / /  
Reference Info. IEICE Tech. Rep., vol. 124, no. 158, ED2024-15, pp. 8-11, Aug. 2024.
Paper # ED2024-15 
Date of Issue 2024-08-16 (ED) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2024-15

Conference Information
Committee ED  
Conference Date 2024-08-23 - 2024-08-23 
Place (in Japanese) (See Japanese page) 
Place (in English) Kochi University of Technology (Eikokuji Campus) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Thin film materials and devices, general 
Paper Information
Registration To ED 
Conference Code 2024-08-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication and Characterization of Indium Oxide Thin-Film Transistors using Excimer Light Assist Process 
Sub Title (in English)  
Keyword(1) Oxide Semiconductor  
Keyword(2) Indium Oxide  
Keyword(3) Thin-Film Transistor  
Keyword(4) Solution Process  
Keyword(5) Excimer Lamp  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Ryosuke Kasahara  
1st Author's Affiliation Osaka Institute of Technology (Osaka Inst. of Tech.)
2nd Author's Name Takeaki Komai  
2nd Author's Affiliation Osaka Institute of Technology (Osaka Inst. of Tech.)
3rd Author's Name Hideo Wada  
3rd Author's Affiliation Osaka Institute of Technology (Osaka Inst. of Tech.)
4th Author's Name Masatoshi Koyama  
4th Author's Affiliation Osaka Institute of Technology (Osaka Inst. of Tech.)
5th Author's Name Akihiko Fujii  
5th Author's Affiliation Osaka Institute of Technology (Osaka Inst. of Tech.)
6th Author's Name Akihiro Shimizu  
6th Author's Affiliation Ushio Incoporated (Ushio Inc.)
7th Author's Name Noritaka Takezoe  
7th Author's Affiliation Ushio Incoporated (Ushio Inc.)
8th Author's Name Shion Yamaguchi  
8th Author's Affiliation Ushio Incoporated (Ushio Inc.)
9th Author's Name Hiroyasu Ito  
9th Author's Affiliation Ushio Incoporated (Ushio Inc.)
10th Author's Name Toshihiko Maemoto  
10th Author's Affiliation Osaka Institute of Technology (Osaka Inst. of Tech.)
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Speaker Author-1 
Date Time 2024-08-23 14:15:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2024-15 
Volume (vol) vol.124 
Number (no) no.158 
Page pp.8-11 
#Pages 4 
Date of Issue 2024-08-16 (ED) 

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