| 講演抄録/キーワード |
| 講演名 |
2024-10-24 14:50
Investigation of post-metallization annealing condition on the ferroelectric HfN1.15 thin film formation ○Kangbai Li・Shun-ichiro Ohmi(Tokyo Tech.) SDM2024-49 |
| 抄録 |
(和) |
(まだ登録されていません) |
| (英) |
In this paper, the annealing condition and Ar/N2 gas flow rate dependences on the ferroelectric HfN1.15 formed by ECR-plasma sputtering was investigated. The equivalent oxide thickness (EOT) of 2.74 nm was obtained with Ar/N2 gas flow rate of 8/7 sccm followed by the 400°C/5 min post metallization annealing (PMA) in N2. The EOT was decreased to 1.50 nm with the deposition of the Ar/N2 gas flow rate of 14/14 sccm. However, the leakage current increased which led to the degradation of ferroelectric property. |
| キーワード |
(和) |
/ / / / / / / |
| (英) |
Hafnium nitride / ECR-plasma sputtering / gas flow rate / / / / / |
| 文献情報 |
信学技報, vol. 124, no. 222, SDM2024-49, pp. 26-28, 2024年10月. |
| 資料番号 |
SDM2024-49 |
| 発行日 |
2024-10-17 (SDM) |
| ISSN |
Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| PDFダウンロード |
SDM2024-49 |