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Paper Abstract and Keywords
Presentation 2024-10-24 14:50
Investigation of post-metallization annealing condition on the ferroelectric HfN1.15 thin film formation
Kangbai Li, Shun-ichiro Ohmi (Tokyo Tech.) SDM2024-49
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, the annealing condition and Ar/N2 gas flow rate dependences on the ferroelectric HfN1.15 formed by ECR-plasma sputtering was investigated. The equivalent oxide thickness (EOT) of 2.74 nm was obtained with Ar/N2 gas flow rate of 8/7 sccm followed by the 400°C/5 min post metallization annealing (PMA) in N2. The EOT was decreased to 1.50 nm with the deposition of the Ar/N2 gas flow rate of 14/14 sccm. However, the leakage current increased which led to the degradation of ferroelectric property.
Keyword (in Japanese) (See Japanese page) 
(in English) Hafnium nitride / ECR-plasma sputtering / gas flow rate / / / / /  
Reference Info. IEICE Tech. Rep., vol. 124, no. 222, SDM2024-49, pp. 26-28, Oct. 2024.
Paper # SDM2024-49 
Date of Issue 2024-10-17 (SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2024-49

Conference Information
Committee SDM  
Conference Date 2024-10-24 - 2024-10-24 
Place (in Japanese) (See Japanese page) 
Place (in English) NICHe, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2024-10-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Investigation of post-metallization annealing condition on the ferroelectric HfN1.15 thin film formation 
Sub Title (in English)  
Keyword(1) Hafnium nitride  
Keyword(2) ECR-plasma sputtering  
Keyword(3) gas flow rate  
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1st Author's Name Kangbai Li  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
2nd Author's Name Shun-ichiro Ohmi  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
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Speaker Author-1 
Date Time 2024-10-24 14:50:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2024-49 
Volume (vol) vol.124 
Number (no) no.222 
Page pp.26-28 
#Pages 3 
Date of Issue 2024-10-17 (SDM) 

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