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Paper Abstract and Keywords
Presentation 2024-11-28 16:55
Carrier diffusion processes in InGaN quantum wells measured by time-resolved PL measurements
Osuke Ito, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Maiko Ito, Rintaro Koda, Tatsushi Hamaguchi (Sony Semiconductor Solutions Corp.) ED2024-27 CPM2024-71 LQE2024-58
Abstract (in Japanese) (See Japanese page) 
(in English) Carrier diffusion processes in InGaN quantum wells (QWs) will probably be largely influenced by potential fluctuation in the QWs, and are not so simple. Various studies have reported the diffusion constants, but the values are quite scattered. The transient Grating technique and spot size measurements are commonly used to determine the diffusion constants, but both methods can overestimate the values due to the reabsorption of emitted light. In this study, we have measured the diffusion constants in an InGaN QW sample by another method, in which the light reabsorption cannot affect the estimation. A metal mask with small holes is deposited to the InGaN-QW sample, and time-resolved photoluminescence (PL) measurements were performed through the holes. By comparing results for different hole sizes, carrier diffusion constants can be estimated, and the results suggest the carrier transport properties are related with the localization due to potential fluctuations.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaN quantum wells / time-resolved PL measurements / carrier diffusion / / / / /  
Reference Info. IEICE Tech. Rep., vol. 124, no. 280, LQE2024-58, pp. 29-32, Nov. 2024.
Paper # LQE2024-58 
Date of Issue 2024-11-21 (ED, CPM, LQE) 
ISSN Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2024-27 CPM2024-71 LQE2024-58

Conference Information
Committee ED CPM LQE  
Conference Date 2024-11-28 - 2024-11-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2024-11-ED-CPM-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Carrier diffusion processes in InGaN quantum wells measured by time-resolved PL measurements 
Sub Title (in English)  
Keyword(1) InGaN quantum wells  
Keyword(2) time-resolved PL measurements  
Keyword(3) carrier diffusion  
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1st Author's Name Osuke Ito  
1st Author's Affiliation Kanazawa Institute of Technology (Kanazawa Inst. Tech.)
2nd Author's Name Atsushi A. Yamaguchi  
2nd Author's Affiliation Kanazawa Institute of Technology (Kanazawa Inst. Tech.)
3rd Author's Name Maiko Ito  
3rd Author's Affiliation Sony Semiconductor Solutions Corporation (Sony Semiconductor Solutions Corp.)
4th Author's Name Rintaro Koda  
4th Author's Affiliation Sony Semiconductor Solutions Corporation (Sony Semiconductor Solutions Corp.)
5th Author's Name Tatsushi Hamaguchi  
5th Author's Affiliation Sony Semiconductor Solutions Corporation (Sony Semiconductor Solutions Corp.)
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Speaker Author-1 
Date Time 2024-11-28 16:55:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2024-27, CPM2024-71, LQE2024-58 
Volume (vol) vol.124 
Number (no) no.278(ED), no.279(CPM), no.280(LQE) 
Page pp.29-32 
#Pages 4 
Date of Issue 2024-11-21 (ED, CPM, LQE) 

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