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| Presentation | 2024-12-20 10:40 [Invited Talk] Double δ-doped Ga0.22In0.78Sb Channel HEMTs with over 450-GHz-fmax Ryuto Machida (NICT), Rikuto Yoshida, Naoyuki Kishimoto, Ryosuke Kouno, Yuuto Isomae, Reo Ebihara, Takuya Hayashi, Tomoki Jinnai, Munemasa Kunisawa (TUS), Issei Watanabe, Yoshimi Yamashita, Shinsuke Hara, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS)  ED2024-61 MWPTHz2024-73 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | To further improve the RF characteristics of InSb-based high electron mobility transistors (HEMTs), we fabricated double δ-doped Ga0.22In0.78Sb channel HEMTs with thin AlInSb spacer and barrier to reduce the gate-to-channel distance. As a result, high cutoff frequency (fT) of 342 GHz and high maximum oscillation frequency (fmax) of 451 GHz were respectively achieved in 50- and 70-nm-gate HEMTs. This fT is almost the same as the highest values ever reported for InSb-based field effect transistors. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | InSb-based Compound Semiconductors / High Electron Mobility Transistor (HEMT) / Double δ-doped / Thin Spacer and Barrier Layers / Delay Time Analysis / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 124, no. 314, ED2024-61, pp. 26-29, Dec. 2024. | |
| Paper # | ED2024-61 | |
| Date of Issue | 2024-12-12 (ED, MWPTHz) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2024-61 MWPTHz2024-73 |
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| Conference Information | |
| Committee | ED MWPTHz |
| Conference Date | 2024-12-19 - 2024-12-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | RIEC, Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2024-12-ED-MWPTHz |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Double δ-doped Ga0.22In0.78Sb Channel HEMTs with over 450-GHz-fmax |
| Sub Title (in English) | |
| Keyword(1) | InSb-based Compound Semiconductors |
| Keyword(2) | High Electron Mobility Transistor (HEMT) |
| Keyword(3) | Double δ-doped |
| Keyword(4) | Thin Spacer and Barrier Layers |
| Keyword(5) | Delay Time Analysis |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Ryuto Machida |
| 1st Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 2nd Author's Name | Rikuto Yoshida |
| 2nd Author's Affiliation | Tokyo University of Science (TUS) |
| 3rd Author's Name | Naoyuki Kishimoto |
| 3rd Author's Affiliation | Tokyo University of Science (TUS) |
| 4th Author's Name | Ryosuke Kouno |
| 4th Author's Affiliation | Tokyo University of Science (TUS) |
| 5th Author's Name | Yuuto Isomae |
| 5th Author's Affiliation | Tokyo University of Science (TUS) |
| 6th Author's Name | Reo Ebihara |
| 6th Author's Affiliation | Tokyo University of Science (TUS) |
| 7th Author's Name | Takuya Hayashi |
| 7th Author's Affiliation | Tokyo University of Science (TUS) |
| 8th Author's Name | Tomoki Jinnai |
| 8th Author's Affiliation | Tokyo University of Science (TUS) |
| 9th Author's Name | Munemasa Kunisawa |
| 9th Author's Affiliation | Tokyo University of Science (TUS) |
| 10th Author's Name | Issei Watanabe |
| 10th Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 11th Author's Name | Yoshimi Yamashita |
| 11th Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 12th Author's Name | Shinsuke Hara |
| 12th Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 13th Author's Name | Akifumi Kasamatsu |
| 13th Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 14th Author's Name | Akira Endoh |
| 14th Author's Affiliation | Tokyo University of Science (TUS) |
| 15th Author's Name | Hiroki Fujishiro |
| 15th Author's Affiliation | Tokyo University of Science (TUS) |
| Speaker | Author-1 |
| Date Time | 2024-12-20 10:40:00 |
| Presentation Time | 40 minutes |
| Registration for | ED |
| Paper # | ED2024-61, MWPTHz2024-73 |
| Volume (vol) | vol.124 |
| Number (no) | no.314(ED), no.315(MWPTHz) |
| Page | pp.26-29 |
| #Pages | 4 |
| Date of Issue | 2024-12-12 (ED, MWPTHz) |
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