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Paper Abstract and Keywords
Presentation 2025-01-24 11:25
Effects of dry etching-induced damage and TMAH treatment on ALD-SiNx/GaN MIS interface characteristics on polar and non-polar GaN surfaces
Koji Yoshitsugu, Takahiro Yamada, Yuki Takiguchi, Shingo Tomohisa, Takashi Takenaga (Mitsubishi Electric), Yasuyuki Miyamoto (Science Tokyo) ED2024-79 MW2024-165
Abstract (in Japanese) (See Japanese page) 
(in English) This report aims to clarify the effects of dry etching-induced damage by ICP-RIE on polar and non-polar GaN surfaces. We fabricated MIS structures utilizing atomic-layer-deposited SiNx on free-standing substrates and evaluated their capacitance-voltage characteristics. The analysis revealed that the polar c-plane (0001) is more sensitive to surface processes compared to the non-polar m-plane (10-10), showing a negative flat-band voltage shift and a decrease in effective carrier density. In addition, it was found that annealing treatment alone is not sufficient to recover these damages on the c-plane, and TMAH wet treatment is effective.
Keyword (in Japanese) (See Japanese page) 
(in English) ALD-SiNx / GaN / MIS / polar / non-polar / TMAH / /  
Reference Info. IEICE Tech. Rep., vol. 124, no. 355, ED2024-79, pp. 63-66, Jan. 2025.
Paper # ED2024-79 
Date of Issue 2025-01-16 (ED, MW) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2024-79 MW2024-165

Conference Information
Committee MW ED  
Conference Date 2025-01-23 - 2025-01-24 
Place (in Japanese) (See Japanese page) 
Place (in English) fukaya-kouminkan 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2025-01-MW-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effects of dry etching-induced damage and TMAH treatment on ALD-SiNx/GaN MIS interface characteristics on polar and non-polar GaN surfaces 
Sub Title (in English)  
Keyword(1) ALD-SiNx  
Keyword(2) GaN  
Keyword(3) MIS  
Keyword(4) polar  
Keyword(5) non-polar  
Keyword(6) TMAH  
Keyword(7)  
Keyword(8)  
1st Author's Name Koji Yoshitsugu  
1st Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
2nd Author's Name Takahiro Yamada  
2nd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
3rd Author's Name Yuki Takiguchi  
3rd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
4th Author's Name Shingo Tomohisa  
4th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
5th Author's Name Takashi Takenaga  
5th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
6th Author's Name Yasuyuki Miyamoto  
6th Author's Affiliation Institute of Science Tokyo (Science Tokyo)
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Speaker Author-1 
Date Time 2025-01-24 11:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2024-79, MW2024-165 
Volume (vol) vol.124 
Number (no) no.355(ED), no.356(MW) 
Page pp.63-66 
#Pages 4 
Date of Issue 2025-01-16 (ED, MW) 

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