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Paper Abstract and Keywords
Presentation 2025-01-29 14:50
[Invited Talk] Clarifying the Physical Origin of Long-period Electrical Instability in Silicon Fin-type Quantum Dots
Hiroshi Oka, Hidehiro Asai, Kimihiko Kato, Takumi Inaba, Shunsuke Shitakata, Shota Iizuka, Yusuke Chiashi, Yuika Kobayashi, Hitoshi Yui, Shoko Nagano, Shigenori Murakami, Yoshihisa Iba, Minoru Ogura, Takashi Nakayama, Koike Hanpei, Hiroshi Fuketa (AIST), Satoshi Moriyama (TDU), Takahiro Mori (AIST) SDM2024-68
Abstract (in Japanese) (See Japanese page) 
(in English) To realize highly integrated quantum computers, various types of solid-state qubits have been developed. In particular, Si spin qubits have an advantage in scalability due to its CMOS-compatible manufacturing technology. Recently, the performance of Si spin qubits has been developed steadily such as prolonged coherence time and improved operation fidelity. In addition to improving the performance of Si spin qubits, long-period electrical stability is also an important factor for the practical operation of quantum computers, which directly leads to error amplification. However, there are only limited reports on the long-period electrical stability of the Si spin qubits and its origin has not been thoroughly discussed so far. In this study, we characterized the long-period random telegraph noise (RTN) in fin-type Si quantum dots and clarified its physical origin for the first time.
Keyword (in Japanese) (See Japanese page) 
(in English) Quantum computer / Si qubits / Fin-type quantum dots / Electrical stability / RTN / Band-edge states / /  
Reference Info. IEICE Tech. Rep., vol. 124, no. 367, SDM2024-68, pp. 11-14, Jan. 2025.
Paper # SDM2024-68 
Date of Issue 2025-01-22 (SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2025-01-29 - 2025-01-29 
Place (in Japanese) (See Japanese page) 
Place (in English) KIT Toranomon Graduate School 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Advanced semiconductor devices and processes (Special feature on IEDM) 
Paper Information
Registration To SDM 
Conference Code 2025-01-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Clarifying the Physical Origin of Long-period Electrical Instability in Silicon Fin-type Quantum Dots 
Sub Title (in English)  
Keyword(1) Quantum computer  
Keyword(2) Si qubits  
Keyword(3) Fin-type quantum dots  
Keyword(4) Electrical stability  
Keyword(5) RTN  
Keyword(6) Band-edge states  
Keyword(7)  
Keyword(8)  
1st Author's Name Hiroshi Oka  
1st Author's Affiliation AIST (AIST)
2nd Author's Name Hidehiro Asai  
2nd Author's Affiliation AIST (AIST)
3rd Author's Name Kimihiko Kato  
3rd Author's Affiliation AIST (AIST)
4th Author's Name Takumi Inaba  
4th Author's Affiliation AIST (AIST)
5th Author's Name Shunsuke Shitakata  
5th Author's Affiliation AIST (AIST)
6th Author's Name Shota Iizuka  
6th Author's Affiliation AIST (AIST)
7th Author's Name Yusuke Chiashi  
7th Author's Affiliation AIST (AIST)
8th Author's Name Yuika Kobayashi  
8th Author's Affiliation AIST (AIST)
9th Author's Name Hitoshi Yui  
9th Author's Affiliation AIST (AIST)
10th Author's Name Shoko Nagano  
10th Author's Affiliation AIST (AIST)
11th Author's Name Shigenori Murakami  
11th Author's Affiliation AIST (AIST)
12th Author's Name Yoshihisa Iba  
12th Author's Affiliation AIST (AIST)
13th Author's Name Minoru Ogura  
13th Author's Affiliation AIST (AIST)
14th Author's Name Takashi Nakayama  
14th Author's Affiliation AIST (AIST)
15th Author's Name Koike Hanpei  
15th Author's Affiliation AIST (AIST)
16th Author's Name Hiroshi Fuketa  
16th Author's Affiliation AIST (AIST)
17th Author's Name Satoshi Moriyama  
17th Author's Affiliation Tokyo Denki University (TDU)
18th Author's Name Takahiro Mori  
18th Author's Affiliation AIST (AIST)
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Speaker Author-1 
Date Time 2025-01-29 14:50:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2024-68 
Volume (vol) vol.124 
Number (no) no.367 
Page pp.11-14 
#Pages
Date of Issue 2025-01-22 (SDM) 


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