Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2025-11-13 14:10
[Invited Talk] Atomistic Analysis of the Electronic States in 4H-SiC Inversion Layers
Sachika Nagamizo, Hajime Tanaka, Nobuya Mori (UOsaka) SDM2025-57
Abstract (in Japanese) (See Japanese page) 
(in English) Using an atomistic model based on the empirical pseudopotential method, we calculated the electronic structure of the 4H-SiC MOS inversion layer. We then analyzed the dependence of inversion-layer electronic states on the interface structure as well as phenomena that reflect the characteristics of the full band structure. Furthermore, to improve the computational efficiency of electronic-state calculations for 4H-SiC within an atomistic framework, we proposed a novel band-structure model based on the tight-binding approximation. We demonstrated that the conduction band can be accurately reproduced using only a small number of fitting parameters.
Keyword (in Japanese) (See Japanese page) 
(in English) 4H-SiC / inversion layer / floating electron state / atomistic model / pseudopotential / tight-binding approximation / /  
Reference Info. IEICE Tech. Rep., vol. 125, no. 246, SDM2025-57, pp. 13-18, Nov. 2025.
Paper # SDM2025-57 
Date of Issue 2025-11-06 (SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2025-57

Conference Information
Committee SDM  
Conference Date 2025-11-13 - 2025-11-14 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit simulation, etc. 
Paper Information
Registration To SDM 
Conference Code 2025-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Atomistic Analysis of the Electronic States in 4H-SiC Inversion Layers 
Sub Title (in English)  
Keyword(1) 4H-SiC  
Keyword(2) inversion layer  
Keyword(3) floating electron state  
Keyword(4) atomistic model  
Keyword(5) pseudopotential  
Keyword(6) tight-binding approximation  
Keyword(7)  
Keyword(8)  
1st Author's Name Sachika Nagamizo  
1st Author's Affiliation The University of Osaka (UOsaka)
2nd Author's Name Hajime Tanaka  
2nd Author's Affiliation The University of Osaka (UOsaka)
3rd Author's Name Nobuya Mori  
3rd Author's Affiliation The University of Osaka (UOsaka)
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2025-11-13 14:10:00 
Presentation Time 50 minutes 
Registration for SDM 
Paper # SDM2025-57 
Volume (vol) vol.125 
Number (no) no.246 
Page pp.13-18 
#Pages 6 
Date of Issue 2025-11-06 (SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan