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Paper Abstract and Keywords
Presentation 2026-01-23 13:25
Performance Enhancement of AlGaN/GaN HEMT via Recessed Gate Structure
Masaya Takimoto, Tasuku Sumino, Tsutomu Matsuura, Kazuyuki Onoe, Yoshiki Kojima (Mitsubishi Elec. Corp.) ED2025-79 MW2025-190
Abstract (in Japanese) (See Japanese page) 
(in English) In this study, a recessed gate structure applied to AlGaN/GaN HEMTs to balance performance enhancement and reliability maintenance. While thinning the AlGaN barrier layer can improve device performance, it also introduces degradation phenomena such as current collapse. Therefore, we investigated a recessed gate process that selectively thins the AlGaN layer beneath the gate, aiming to suppress current collapse and improve gain. As a result, electrical characterization showed a reduction in leakage current and an increase in gain, and reliability testing demonstrated durability comparable to the current products.
Keyword (in Japanese) (See Japanese page) 
(in English) AlGaN/GaN HEMT / recessed gate / GaN / Gallium Nitride / High-Frequency Device / / /  
Reference Info. IEICE Tech. Rep., vol. 125, no. 326, ED2025-79, pp. 79-81, Jan. 2026.
Paper # ED2025-79 
Date of Issue 2026-01-15 (ED, MW) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2025-79 MW2025-190

Conference Information
Committee ED MW  
Conference Date 2026-01-22 - 2026-01-23 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2026-01-ED-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Performance Enhancement of AlGaN/GaN HEMT via Recessed Gate Structure 
Sub Title (in English)  
Keyword(1) AlGaN/GaN HEMT  
Keyword(2) recessed gate  
Keyword(3) GaN  
Keyword(4) Gallium Nitride  
Keyword(5) High-Frequency Device  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Masaya Takimoto  
1st Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Elec. Corp.)
2nd Author's Name Tasuku Sumino  
2nd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Elec. Corp.)
3rd Author's Name Tsutomu Matsuura  
3rd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Elec. Corp.)
4th Author's Name Kazuyuki Onoe  
4th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Elec. Corp.)
5th Author's Name Yoshiki Kojima  
5th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Elec. Corp.)
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Speaker Author-1 
Date Time 2026-01-23 13:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2025-79, MW2025-190 
Volume (vol) vol.125 
Number (no) no.326(ED), no.327(MW) 
Page pp.79-81 
#Pages 3 
Date of Issue 2026-01-15 (ED, MW) 

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