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Paper Abstract and Keywords
Presentation 2026-01-28 13:35
[Invited Talk] Oxide-semiconductor Channel Transistor DRAM (OCTRAM) for High-density and Low-power AI memory
Takeru Maeda (Kioxia) SDM2025-66
Abstract (in Japanese) (See Japanese page) 
(in English) With the rapid advancement of AI technology, there is a growing demand for high-performance DRAM that is both high-density and low-power. We have developed a 4F2 structure DRAM (OCTRAM) with the oxide semiconductor (InGaZnO) channel transistors that exhibit extremely low off-leakage characteristics (<1018A/cell). In this paper, we demonstrate the advantages of oxide semiconductors, including long data retention characteristics and low power consumption.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaZnO / oxide semiconductor / vertical channel transistor / DRAM / AI / high density / low power / OCTRAM  
Reference Info. IEICE Tech. Rep., vol. 125, no. 347, SDM2025-66, pp. 5-6, Jan. 2026.
Paper # SDM2025-66 
Date of Issue 2026-01-21 (SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2025-66

Conference Information
Committee SDM  
Conference Date 2026-01-28 - 2026-01-28 
Place (in Japanese) (See Japanese page) 
Place (in English) KIT Toranomon Graduate School 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Advanced semiconductor devices and processes (Special feature on IEDM) 
Paper Information
Registration To SDM 
Conference Code 2026-01-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Oxide-semiconductor Channel Transistor DRAM (OCTRAM) for High-density and Low-power AI memory 
Sub Title (in English)  
Keyword(1) InGaZnO  
Keyword(2) oxide semiconductor  
Keyword(3) vertical channel transistor  
Keyword(4) DRAM  
Keyword(5) AI  
Keyword(6) high density  
Keyword(7) low power  
Keyword(8) OCTRAM  
1st Author's Name Takeru Maeda  
1st Author's Affiliation Kioxia (Kioxia)
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Speaker Author-1 
Date Time 2026-01-28 13:35:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2025-66 
Volume (vol) vol.125 
Number (no) no.347 
Page pp.5-6 
#Pages 2 
Date of Issue 2026-01-21 (SDM) 

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