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Paper Abstract and Keywords
Presentation 2026-04-09 10:20
[Invited Talk] Dynamic Flash Memory Operation Experimentally Validated with 65nm SOI Technology
Koji Sakui (ISCT) ICD2026-2
Abstract (in Japanese) (See Japanese page) 
(in English) I will give a talk reviewing papers centered on Sakui’s presentation at IMW 2025 on the research results of Unisantis and imec. Dynamic Flash Memory (DFM) have been fabricated on 300 mm SOI wafers with 65 nm technology, experimentally validating a wide “1” and “0” margin for the first time. The proposed device operates exclusively with positive polarity signals, eliminating the need for negative voltages. Thanks to its unique split-gate structure, a long retention time of over 10 seconds at 85 ℃, and a robust Bit Line (BL) disturbance time of 10 ms with the BL stress voltage (VSBL) of 2.5 V are demonstrated.
Keyword (in Japanese) (See Japanese page) 
(in English) 1T-DRAM / Z-RAM / Capacitorless DRAM / FBC / / / /  
Reference Info. IEICE Tech. Rep., vol. 126, no. 3, ICD2026-2, pp. 2-7, April 2026.
Paper # ICD2026-2 
Date of Issue 2026-04-02 (ICD) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2026-2

Conference Information
Committee ICD  
Conference Date 2026-04-09 - 2026-04-10 
Place (in Japanese) (See Japanese page) 
Place (in English) Kawasaki City Industrial Promotion Hall 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Memory 
Paper Information
Registration To ICD 
Conference Code 2026-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Dynamic Flash Memory Operation Experimentally Validated with 65nm SOI Technology 
Sub Title (in English)  
Keyword(1) 1T-DRAM  
Keyword(2) Z-RAM  
Keyword(3) Capacitorless DRAM  
Keyword(4) FBC  
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1st Author's Name Koji Sakui  
1st Author's Affiliation Institute of Science Tokyo (ISCT)
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Speaker Author-1 
Date Time 2026-04-09 10:20:00 
Presentation Time 50 minutes 
Registration for ICD 
Paper # ICD2026-2 
Volume (vol) vol.126 
Number (no) no.3 
Page pp.2-7 
#Pages 6 
Date of Issue 2026-04-02 (ICD) 

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