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Paper Abstract and Keywords
Presentation 2026-04-25 16:35
[Invited Talk] Thermal oxidation dependence on Si substrate orientation and the application to ferroelectric non-doped HfO2 thin film formation
Shun-ichiro Ohmi, Masashi Tsuruguchi, Yukitomo Morita, Haoran Yan (Science Tokyo), Ken Hayakawa, Haruo Sudo, Koji Izunome (GWJ) SDM2026-6 OME2026-6
Abstract (in Japanese) (See Japanese page) 
(in English) In this research, we investigated the thermal oxidation mechanism of Si(100) and Si(110) which would be used as the channel of 3-dimensional gate structure with ferroelectric nondoped HfO2 (FeND-HfO2) thin films for the suppression of SiOx interfacial layer (IL) formation. Furthermore, we investigated the suppression of SiOx IL formation by the FeND-HfO2 thin film formation on Si(100) and Si(110) substrates.
Keyword (in Japanese) (See Japanese page) 
(in English) 3-dimensional gate structure / Si substrate orientation / SiO2 / thermal oxidation / ferroelectrics / HfO2 / interfacial layer / electron-beam evaporation  
Reference Info. IEICE Tech. Rep., vol. 126, no. 8, SDM2026-6, pp. 22-25, April 2026.
Paper # SDM2026-6 
Date of Issue 2026-04-18 (SDM, OME) 
ISSN Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2026-6 OME2026-6

Conference Information
Committee OME SDM  
Conference Date 2026-04-25 - 2026-04-25 
Place (in Japanese) (See Japanese page) 
Place (in English) AMA Home Plaza 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Thin film devices (Si, compound, organic, flexible), Biotechnology, Materials, Characterization, etc. 
Paper Information
Registration To SDM 
Conference Code 2026-04-OME-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Thermal oxidation dependence on Si substrate orientation and the application to ferroelectric non-doped HfO2 thin film formation 
Sub Title (in English)  
Keyword(1) 3-dimensional gate structure  
Keyword(2) Si substrate orientation  
Keyword(3) SiO2  
Keyword(4) thermal oxidation  
Keyword(5) ferroelectrics  
Keyword(6) HfO2  
Keyword(7) interfacial layer  
Keyword(8) electron-beam evaporation  
1st Author's Name Shun-ichiro Ohmi  
1st Author's Affiliation Institute of Science Tokyo (Science Tokyo)
2nd Author's Name Masashi Tsuruguchi  
2nd Author's Affiliation Institute of Science Tokyo (Science Tokyo)
3rd Author's Name Yukitomo Morita  
3rd Author's Affiliation Institute of Science Tokyo (Science Tokyo)
4th Author's Name Haoran Yan  
4th Author's Affiliation Institute of Science Tokyo (Science Tokyo)
5th Author's Name Ken Hayakawa  
5th Author's Affiliation GlobalWafers Japan Co., Ltd. (GWJ)
6th Author's Name Haruo Sudo  
6th Author's Affiliation GlobalWafers Japan Co., Ltd. (GWJ)
7th Author's Name Koji Izunome  
7th Author's Affiliation GlobalWafers Japan Co., Ltd. (GWJ)
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Speaker Author-1 
Date Time 2026-04-25 16:35:00 
Presentation Time 45 minutes 
Registration for SDM 
Paper # SDM2026-6, OME2026-6 
Volume (vol) vol.126 
Number (no) no.8(SDM), no.9(OME) 
Page pp.22-25 
#Pages 4 
Date of Issue 2026-04-18 (SDM, OME) 

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