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Paper Abstract and Keywords
Presentation 2026-05-22 15:20
Study of GaN surfaces exposed to oxygen plasma using X-ray photoelectron spectroscopy
Takumi Iwanami, Takuma Mori, Hiroshi Okada (Toyohashi Univ. Technol.) ED2026-6 CPM2026-6 SDM2026-12
Abstract (in Japanese) (See Japanese page) 
(in English) Plasma processing is essential in the fabrication of GaN, which is expected to be a next-generation material for power devices. During dry etching for recess structure formation or ion implantation processes, photoresists undergo chemical alteration due to plasma exposure and heat, becoming highly resilient and difficult to remove. While $O_2$ ashing using oxygen plasma is an effective method for resist stripping, there are concerns regarding the impact of oxidation and damage to the exposed GaN surface on device performance. In this study, $O_2$ ashing is performed on GaN grown on sapphire substrates, and the chemical properties of the altered layer on the GaN surface induced by $O_2$ ashing are evaluated using X-ray photoelectron spectroscopy (XPS). Furthermore, the effectiveness of hydrochloric acid (HCl) treatment in removing the altered layer is investigated.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / XPS / O_2 ashing / / / / /  
Reference Info. IEICE Tech. Rep., vol. 126, no. 37, SDM2026-12, pp. 21-24, May 2026.
Paper # SDM2026-12 
Date of Issue 2026-05-15 (ED, CPM, SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2026-6 CPM2026-6 SDM2026-12

Conference Information
Committee CPM ED SDM  
Conference Date 2026-05-22 - 2026-05-22 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2026-05-CPM-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Study of GaN surfaces exposed to oxygen plasma using X-ray photoelectron spectroscopy 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) XPS  
Keyword(3) O_2 ashing  
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1st Author's Name Takumi Iwanami  
1st Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. Technol.)
2nd Author's Name Takuma Mori  
2nd Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. Technol.)
3rd Author's Name Hiroshi Okada  
3rd Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. Technol.)
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Speaker Author-1 
Date Time 2026-05-22 15:20:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # ED2026-6, CPM2026-6, SDM2026-12 
Volume (vol) vol.126 
Number (no) no.35(ED), no.36(CPM), no.37(SDM) 
Page pp.21-24 
#Pages 4 
Date of Issue 2026-05-15 (ED, CPM, SDM) 

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