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Paper Abstract and Keywords
Presentation 2026-05-22 15:45
Contact analysis of GaSb nanowires grown by MBE
Soh Komatsu, Masashi Akabori (JAIST) ED2026-7 CPM2026-7 SDM2026-13
Abstract (in Japanese) (See Japanese page) 
(in English) GaSb nanowires are promising channel materials for p-type gate-all-around FETs. However, the growth of GaSb nanowires is challenging due to the anti-surfactant effect of antimony, and there are few reports on their growth and electrical characteristics. We have previously reported the growth of GaSb nanowires by molecular beam epitaxy using a hydrogen silsesquioxane mask, and the p-channel operation of GaSb nanowire FETs. Currently, we are investigating electrical and contact properties using multi-terminal GaSb nanowire devices. In this report, we present the results of contact analysis utilizing 4-terminal and contact end resistance measurements.
Keyword (in Japanese) (See Japanese page) 
(in English) GaSb nanowire / Contact resistance / Contact end resistance / MBE / / / /  
Reference Info. IEICE Tech. Rep., vol. 126, no. 35, ED2026-7, pp. 25-28, May 2026.
Paper # ED2026-7 
Date of Issue 2026-05-15 (ED, CPM, SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2026-7 CPM2026-7 SDM2026-13

Conference Information
Committee CPM ED SDM  
Conference Date 2026-05-22 - 2026-05-22 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2026-05-CPM-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Contact analysis of GaSb nanowires grown by MBE 
Sub Title (in English)  
Keyword(1) GaSb nanowire  
Keyword(2) Contact resistance  
Keyword(3) Contact end resistance  
Keyword(4) MBE  
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1st Author's Name Soh Komatsu  
1st Author's Affiliation Japan Advanced Institute of Science and Technology (JAIST)
2nd Author's Name Masashi Akabori  
2nd Author's Affiliation Japan Advanced Institute of Science and Technology (JAIST)
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Speaker Author-1 
Date Time 2026-05-22 15:45:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2026-7, CPM2026-7, SDM2026-13 
Volume (vol) vol.126 
Number (no) no.35(ED), no.36(CPM), no.37(SDM) 
Page pp.25-28 
#Pages 4 
Date of Issue 2026-05-15 (ED, CPM, SDM) 

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