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Paper Abstract and Keywords
Presentation 2026-05-22 16:35
Electrical Properties of AlGaN/GaN Heterostructure Transistors with Gate Recesses Fabricated by Photoelectrochemical Etching
Taketomo Sato, Tokachi Katsumata, Haruki Okano, Naoki Shiozawa (Hokkaido Univ.) ED2026-9 CPM2026-9 SDM2026-15
Abstract (in Japanese) (See Japanese page) 
(in English) Contactless photo-electrochemical (CL-PEC) etching was applied to AlGaN/GaN HFETs to control the threshold voltage by precisely thinning the AlGaN layer. Etching with an ohmic cathode showed linear depth control, while a Schottky cathode resulted in self-terminated etching. Capacitance–voltage measurements confirmed that structural changes were accurately reflected in electrical characteristics. Recessed-gate devices fabricated using CL-PEC etching achieved Vth tuning while suppressing transconductance degradation.
Keyword (in Japanese) (See Japanese page) 
(in English) AlGaN / GaN / high electron-mobility transistors (HEMTs) / photoelectrochemical (PEC) etching / / / /  
Reference Info. IEICE Tech. Rep., vol. 126, no. 35, ED2026-9, pp. 33-36, May 2026.
Paper # ED2026-9 
Date of Issue 2026-05-15 (ED, CPM, SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2026-9 CPM2026-9 SDM2026-15

Conference Information
Committee CPM ED SDM  
Conference Date 2026-05-22 - 2026-05-22 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2026-05-CPM-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Electrical Properties of AlGaN/GaN Heterostructure Transistors with Gate Recesses Fabricated by Photoelectrochemical Etching 
Sub Title (in English)  
Keyword(1) AlGaN  
Keyword(2) GaN  
Keyword(3) high electron-mobility transistors (HEMTs)  
Keyword(4) photoelectrochemical (PEC) etching  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Taketomo Sato  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Tokachi Katsumata  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
3rd Author's Name Haruki Okano  
3rd Author's Affiliation Hokkaido University (Hokkaido Univ.)
4th Author's Name Naoki Shiozawa  
4th Author's Affiliation Hokkaido University (Hokkaido Univ.)
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Speaker Author-1 
Date Time 2026-05-22 16:35:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2026-9, CPM2026-9, SDM2026-15 
Volume (vol) vol.126 
Number (no) no.35(ED), no.36(CPM), no.37(SDM) 
Page pp.33-36 
#Pages 4 
Date of Issue 2026-05-15 (ED, CPM, SDM) 

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