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Paper Abstract and Keywords
Presentation 2026-06-11 13:55
Growth and BAW characteristics of epitaxial AlN films on single crystal electrode film/ "Multi-functional interlayer"/ Si substrate.
Hideaki Gommori, Masashi Suzuki, Shoji Kakio (Univ. of Yamanashi), Masashi Seki, Takeshi Kijima (Gaianixx) US2026-11
Abstract (in Japanese) (See Japanese page) 
(in English) To operate at high frequencies in conventional polycrystalline BAW resonators at high frequencies, piezoelectric films must be thinned, which typically degrades crystal orientation and reduces the electromechanical coupling coefficient (kt2). Utilizing single-crystal films can solve this issue. In this study, epitaxial single-crystal AlN thin films were grown on Pt or Ti electrodes/Multi-functional ® interlayer/Si substrates via RF magnetron sputtering. Triaxial orientations were confirmed in the AlN film from XRD analysis. Minimum insertion loss was observed in the AlN film grown at 0.75 Pa, an Ar:N2 ratio of 4:1, and a target-substrate distance of 30 mm. The AlN film on high crystalline Ti film exhibited highest kt2 of 3.72%.
Keyword (in Japanese) (See Japanese page) 
(in English) BAW / AlN / Multi-functional ® interlayer / / / / /  
Reference Info. IEICE Tech. Rep., vol. 126, no. 67, US2026-11, pp. 6-11, June 2026.
Paper # US2026-11 
Date of Issue 2026-06-04 (US) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF US2026-11

Conference Information
Committee US  
Conference Date 2026-06-11 - 2026-06-11 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English) Ultrasound in medicine, Ultrasonics, etc. 
Paper Information
Registration To US 
Conference Code 2026-06-US 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Growth and BAW characteristics of epitaxial AlN films on single crystal electrode film/ "Multi-functional interlayer"/ Si substrate. 
Sub Title (in English)  
Keyword(1) BAW  
Keyword(2) AlN  
Keyword(3) Multi-functional ® interlayer  
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1st Author's Name Hideaki Gommori  
1st Author's Affiliation University of Yamanashi (Univ. of Yamanashi)
2nd Author's Name Masashi Suzuki  
2nd Author's Affiliation University of Yamanashi (Univ. of Yamanashi)
3rd Author's Name Shoji Kakio  
3rd Author's Affiliation University of Yamanashi (Univ. of Yamanashi)
4th Author's Name Masashi Seki  
4th Author's Affiliation Gaianixx (Gaianixx)
5th Author's Name Takeshi Kijima  
5th Author's Affiliation Gaianixx (Gaianixx)
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Speaker Author-1 
Date Time 2026-06-11 13:55:00 
Presentation Time 25 minutes 
Registration for US 
Paper # US2026-11 
Volume (vol) vol.126 
Number (no) no.67 
Page pp.6-11 
#Pages 6 
Date of Issue 2026-06-04 (US) 

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