| Paper Abstract and Keywords |
| Presentation |
2026-06-18 13:05
[Invited Talk]
Impact of back-end-of-line processing on the performance of InP-HEMT Taro Sasaki, Hiroki Sugiyama, Yuki Yoshiya, Takuya Hoshi, Yasuyuki Miyamoto, Hiroshi Hamada, Ibrahim Abdo, Fumito Nakajima (NTT) MW2026-22 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
In this presentation, our 60-nm-gate InP-HEMT technology for high-speed MMICs are introduced. We also present recent findings regarding process technology, focusing on transistor degradation observed during BEOL processing and methods for suppressing this degradation. TEM observations and EDX mappings of degraded transistors revealed that the surface passivation effect of the InP recess-etching stopper was deteriorated. To mitigate this damage, the recess-etching time was shortened, corresponding to a reduction in recess length. As a result, reducing the target recess length from 150 nm to 100 nm was found to effectively suppress the degradation. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
InP / HEMT / 300 GHz band / MMIC / / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 126, no. 78, MW2026-22, pp. 1-6, June 2026. |
| Paper # |
MW2026-22 |
| Date of Issue |
2026-06-11 (MW) |
| ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Download PDF |
MW2026-22 |
| Conference Information |
| Committee |
MW |
| Conference Date |
2026-06-18 - 2026-06-18 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Online |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Microwave |
| Paper Information |
| Registration To |
MW |
| Conference Code |
2026-06-MW |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Impact of back-end-of-line processing on the performance of InP-HEMT |
| Sub Title (in English) |
|
| Keyword(1) |
InP |
| Keyword(2) |
HEMT |
| Keyword(3) |
300 GHz band |
| Keyword(4) |
MMIC |
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| 1st Author's Name |
Taro Sasaki |
| 1st Author's Affiliation |
Device Technology Labs., NTT, Inc. (NTT) |
| 2nd Author's Name |
Hiroki Sugiyama |
| 2nd Author's Affiliation |
Device Technology Labs., NTT, Inc. (NTT) |
| 3rd Author's Name |
Yuki Yoshiya |
| 3rd Author's Affiliation |
Device Technology Labs., NTT, Inc. (NTT) |
| 4th Author's Name |
Takuya Hoshi |
| 4th Author's Affiliation |
Device Technology Labs., NTT, Inc. (NTT) |
| 5th Author's Name |
Yasuyuki Miyamoto |
| 5th Author's Affiliation |
Device Technology Labs., NTT, Inc. (NTT) |
| 6th Author's Name |
Hiroshi Hamada |
| 6th Author's Affiliation |
Device Technology Labs., NTT, Inc. (NTT) |
| 7th Author's Name |
Ibrahim Abdo |
| 7th Author's Affiliation |
Device Technology Labs., NTT, Inc. (NTT) |
| 8th Author's Name |
Fumito Nakajima |
| 8th Author's Affiliation |
Device Technology Labs., NTT, Inc. (NTT) |
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| Speaker |
Author-1 |
| Date Time |
2026-06-18 13:05:00 |
| Presentation Time |
45 minutes |
| Registration for |
MW |
| Paper # |
MW2026-22 |
| Volume (vol) |
vol.126 |
| Number (no) |
no.78 |
| Page |
pp.1-6 |
| #Pages |
6 |
| Date of Issue |
2026-06-11 (MW) |