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Technical Committee on Electron Devices (ED) (Searched in: 2012)
Search Results: Keywords 'from:2012-07-26 to:2012-07-26'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED | 2012-07-26 13:30 |
Fukui | Fukui University | Effects of annealing on DC performance of AlGaN/GaN MIS HEMTs Maiko Hatano, Yuya Taniguchi, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. Fukui)  ED2012-41 |
[more] | ED2012-41 pp.1-4 |
| ED | 2012-07-26 13:55 |
Fukui | Fukui University | Measurement of Channel Electron Mobility in AlGaN/GaN MISHFET Kentaro Tamai, Jin-Ping Ao (Tokushima Univ.), Daigo Kikuta (Toyota Central R&D Labs., Inc.), Masahiro Sugimoto (Toyota Motor Corporation), Yasuo Ohno (Tokushima Univ.) ED2012-42 |
[more] | ED2012-42 pp.5-9 |
| ED | 2012-07-26 14:20 |
Fukui | Fukui University | Temperature dependence of frequency dispersion in $C$-$V$ characteristics of AlN/AlGaN/GaN MIS-HFET Hong-An Shih, Masahiro Kudo, Toshi-kazu Suzuki (JAIST) ED2012-43 |
[more] | ED2012-43 pp.11-15 |
| ED | 2012-07-26 15:00 |
Fukui | Fukui University | Interface characterization of AlInN/GaN heterostructures Tamotsu Hashizume, Yujin Hori, Masamichi Akazawa (Hokkaido Univ.) ED2012-44 |
[more] | ED2012-44 pp.17-20 |
| ED | 2012-07-26 15:25 |
Fukui | Fukui University | Effect of ICP Etching on p-type GaN Schottky Contacts Toshifumi Takahashi (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable), Kazuki Nomoto (Univ. of Notre Dame), Kenji Shiojima (Univ. of Fukui) ED2012-45 |
Low-Mg-doped p-GaN Schottky contacts were applied to evaluate inductive coupled plasma (ICP) etching damages. The ICP ... [more] | ED2012-45 pp.21-24 |
| ED | 2012-07-26 15:50 |
Fukui | Fukui University | Electrical Characteristics of Surface Stoichiometry Controlled p-GaN Schottky Contacts Toshifumi Takahashi (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable), Takashi Kajiwara, Satoru Tanaka (Kyushu Univ.), Kenji Shiojima (Univ. of Fukui) ED2012-46 |
Experimental results of electrical characteristics of Au/Ni Schottky contacts formed on three kinds of p-GaN layers, whi... [more] | ED2012-46 pp.25-30 |
| ED | 2012-07-26 16:15 |
Fukui | Fukui University | Investigation of impact ionization in AlGaN/GaN HEMTs using full-band Monte Carlo model Kazuki Kodama, Hirokuni Tokuda, Masaaki Kuzuhara (Fukui Univ.) ED2012-47 |
[more] | ED2012-47 pp.31-35 |
| ED | 2012-07-27 09:30 |
Fukui | Fukui University | Delay Time Analysis of Strained InSb HEMTs Using Quantum-Corrected Monte Carlo Method Yutaro Nagai, Jun Sato, Shinsuke Hara, Hiroki I. Fujishiro (Tokyo Univ. of Sci.), Akira Endoh, Issei Watanabe (NICT) ED2012-48 |
The strained band structures of InSb are calculated, and then the intrinsic performances of the InSb HEMTs are analyzed... [more] |
ED2012-48 pp.37-42 |
| ED | 2012-07-27 09:55 |
Fukui | Fukui University | Modeling of nonlinear quantum transport for tunnel diodes and theoretical analysis of its cut-off frequency Shin Yamashita, Yuji Kurakami, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) ED2012-49 |
A resonant tunneling diode (RTD) is one of electron devices which can operate at room temperature in the terahertz range... [more] | ED2012-49 pp.43-48 |
| ED | 2012-07-27 10:20 |
Fukui | Fukui University | Large-signal analysis of injection locking and frequency comb properties in array oscillators consisting of resonant tunneling diodes integrated with wideband antennas Kiyoto Asakawa, Atsushi Tashiro, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) ED2012-50 |
A THz range is a frequency region from 300GHz to 10THz and many applications are expected for wireless communications, i... [more] | ED2012-50 pp.49-54 |
| ED | 2012-07-27 11:00 |
Fukui | Fukui University | Study on Synchronized Charge Transfer and Efficiency in GaAs-based Etched Nanowire CCD Yuki Nakano, Takayuki Tanaka, Seiya Kasai (Hokkaido Univ.) ED2012-51 |
For realization of the information processing system integrating nanowire-based circuits on a nanowire network, synchron... [more] | ED2012-51 pp.55-59 |
| ED | 2012-07-27 11:25 |
Fukui | Fukui University | Spin injection experiment into high In-content InGaAs/InAlAs two-dimensional electron gas carried out in a non-local configuration Shiro Hidaka, Taro Kondo, Masashi Akabori, Syoji Yamada (JAIST) ED2012-52 |
lectrical spin injection experiments are carried out in CoFe – high In-content InGaAs/InAlAs two-dimensional elect... [more] | ED2012-52 pp.61-65 |
| ED | 2012-07-27 11:50 |
Fukui | Fukui University | Graphene FET with Diamondlike Carbon Dielectrics Susumu Takabayashi, Meng Yang, Shuichi Ogawa, Hiroyuki Hayashi, Yuki Kurita, Yuji Takakuwa, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2012-53 |
A graphene-channel field effect transistor with a diamondlike carbon (DLC) top-gate dielectric film is presented (DLC-GF... [more] | ED2012-53 pp.67-72 |
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