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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2021)
Search Results: Keywords 'from:2021-10-21 to:2021-10-21'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2021-10-21 10:45 |
Online | Online | [Invited Talk]
Influence of Fluorine on Reliabilities of SiO2 and SixNy Films Yuichiro Mitani (Tokyo City Univ.)  SDM2021-44 |
In this paper, the influence of Fluorine incorporation into SiO2 and Si nitride (SixNy) films which are widely used in t... [more] | SDM2021-44 pp.1-4 |
| SDM | 2021-10-21 11:35 |
Online | Online | Characterization of Gallium Oxide Thin Film Deposited by Sputtering Method Fuminobu Imaizumi (NIT, Oyama college) SDM2021-45 |
[more] | SDM2021-45 pp.5-7 |
| SDM | 2021-10-21 13:00 |
Online | Online | A study on Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator formation for non-volatile memory applications Eun-Ki Hong, Shun-ichiro Ohmi (Tokyo Tech.) SDM2021-46 |
In this study, we investigated Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator formation. The fl... [more] | SDM2021-46 pp.8-11 |
| SDM | 2021-10-21 13:25 |
Online | Online | A study on the effect of inter layers on ferroelectric nondoped HfO2 formation Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech.) SDM2021-47 |
Ferroelectric HfO_2 thin films are able to be formed on Si substrate, which is difficult for conventional materials due ... [more] | SDM2021-47 pp.12-15 |
| SDM | 2021-10-21 13:50 |
Online | Online | A study on Hf-based MONOS nonvolatile memory with HfO2 and HfON tunneling layers for multi-bit/cell operation Pyo Jooyoung, Ihara Akio, Ohmi Shun-ichiro (Tokyo Tech.) SDM2021-48 |
We investigated the in-situ formed Hf-based MONOS non-volatile memory (NVM) device with HfO2 and HfON tunneling layer (T... [more] | SDM2021-48 pp.16-19 |
| SDM | 2021-10-21 14:30 |
Online | Online | [Invited Talk]
Device and Integration Technologies Realizing Silicon Quantum Computers Takahiro Mori (AIST) SDM2021-49 |
[more] | SDM2021-49 p.20 |
| SDM | 2021-10-21 15:20 |
Online | Online | Highly sensitive TMR sensor and its application to bio-magnetic field measurement Mikihiko Oogane (Tohoku Univ.) SDM2021-50 |
The tunnel magneto-resistive sensor (TMR sensor) using a ferromagnetic tunnel junction with small size and low power con... [more] | SDM2021-50 pp.21-22 |
| SDM | 2021-10-21 16:00 |
Online | Online | Current Measurement Platform Applied for Statistical Measurement of Discharge Current due to Traps in SiN Dielectrics Koga Saito, Hayato Suzuki, Hyeonwoo Park, Rihito Kuroda (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2021-51 |
A current measurement platform to measure current across dielectrics with a high precision of $10^{-17}$ A applied for s... [more] | SDM2021-51 pp.23-26 |
| SDM | 2021-10-21 16:25 |
Online | Online | Statistical analysis of RTN behavior on transistor structure, operating region, and carrier transport direction Ryo Akimoto, Rihito Kuroda, Takezo Mawaki, Shigotoshi Sugawa (Tohoku Univ.) SDM2021-52 |
[more] | SDM2021-52 pp.27-32 |
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